Predicting the amount of carbon in carbon nanotubes grown by CH 4 rf plasmas

Atsushi Okita, Yoshiyuki Suda, Atsushi Ozeki, Hirotake Sugawara, Yosuke Sakai, Akinori Oda, Junji Nakamura

研究成果: ジャーナルへの寄稿学術誌査読

58 被引用数 (Scopus)

抄録

Carbon nanotubes (CNTs) were grown on Si substrates by rf C H4 plasma-enhanced chemical vapor deposition in a pressure range of 1-10 Torr, and then characterized by scanning electron microscopy. At 1 Torr, the CNTs continued growing up to 60 min, while their height at 4 Torr had leveled off at 20 min. CNTs hardly grew at 10 Torr and amorphous carbon was deposited instead. C H4 plasma was simulated using a one-dimensional fluid model to evaluate the production and transport of radicals, ions, and nonradical neutrals. The amount of simulated carbon supplied to the electrode surface via the flux of radicals and ions such as C H3, C2 H5, and C2 H5+ was consistent with estimations from experimental results.

本文言語英語
論文番号014302
ジャーナルJournal of Applied Physics
99
1
DOI
出版ステータス出版済み - 2006
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学一般

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