Poly(p-phenylenevinylene)-based field-effect transistors with platinum source-drain electrodes

Organic field-effect transistors (FETs) have been fabricated by using poly(p-phenylenevinylene) (PPV) films prepared from a water soluble precursor polymer and p-channel FET conduction was obtained by using platinum source-drain electrodes. When the conversion temperatures for preparing PPV films changed between 180 and 280 °C, the field-effect hole mobilities changed between 4.3 × 10^-4 and 8.4 × 10^-6 cm² V ^-1 s^-1. The highest field-effect hole mobility was seen on the PPV thermally converted at 180 °C. The decreases in field-effect mobilities in the PPV films with further extended average π-conjugation length converted at higher temperatures were ascribed to morphological defects owing to crystallization.