Physics of ferroelectric interfaces: An attempt at nanoferroelectric physics

Yukio Watanabe

研究成果: 書籍/レポート タイプへの寄稿

5 被引用数 (Scopus)

抄録

Experiments on devices can be regarded as part of basic physics. Here, theoretical analyses of devices using the interface in a ferroelectric junction reveal novel basic properties unknown in conventional experiments. Devices using interfaces in ferroelectric junctions are grouped into two types: (1) the lateral-type, or field-effect, devices that use the transconductance, i.e., the conduction parallel to the interface; and (2) the vertical-type, or diode-like, devices, in which the conduction is perpendicular to the interface and the current flows through the ferroelectric. The discussion below concentrates on the field-effect type (1). On the other hand, the other type of devices have recently attracted intense interest due to the resistance RAM (R-RAM). Additionally, modulation of the tunneling current and the photovoltaic effect have been demonstrated. Details of these topics will be discussed elsewhere. We start our journey by assuming for the present that the ferroelectric is an ideal insulator.

本文言語英語
ホスト出版物のタイトルFerroelectric Thin Films
ホスト出版物のサブタイトルBasic Properties and Device Physics for Memory Applications
出版社Springer Verlag
ページ177-199
ページ数23
ISBN(印刷版)3540241639, 9783540241638
DOI
出版ステータス出版済み - 2月 5 2005

出版物シリーズ

名前Topics in Applied Physics
98
ISSN(印刷版)0303-4216
ISSN(電子版)1437-0859

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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