Parylene-C and high-k polymer bilayer gate dielectric for low-operating voltage organic field-effect transistors

Tomoyuki Ashimine, Tomoaki Onoue, Takeshi Yasuda, Katsuhiko Fujita, Tetsuo Tsutsui

研究成果: ジャーナルへの寄稿学術誌査読

2 被引用数 (Scopus)

抄録

We propose a way to fabricate polymer insulators with a high gate capacitance for low-operating voltage organic field-effect transistors (OFETs). The insulator consists of spin-coated cyanoethylpullulan as a high-k polymer and chemical vapor deposited parylene-C as a covering layer. Parylene-C layer is insoluble in a common organic solvent, so the dielectric system can be fabricated on a layer of solution processable organic semiconductors such as poly(9,9-dioctylfluorene-co-bithiophene) (F8T2). The OFET shows a field-effect mobility of 3.410-3cm2/Vs,a threshold voltage of-1V, and an on/off current ratio of 5.9102. We successfully observed low-voltage operation in OFETs with this dielectric system.

本文言語英語
ページ(範囲)221-227
ページ数7
ジャーナルMolecular Crystals and Liquid Crystals
471
1
DOI
出版ステータス出版済み - 1月 2007

!!!All Science Journal Classification (ASJC) codes

  • 化学一般
  • 材料科学一般
  • 凝縮系物理学

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