Oxygen distribution in silicon melt under inhomogeneous transverse-magnetic fields

This paper aims to report an effect on inhomogeneous transverse-magnetic fields to melt convection and oxygen distribution in silicon melt and at a solid-liquid interface during single crystal growth. The inhomogeneous transverse-magnetic fields were obtained by the calculation based on Biot-Savart equation with an assumption of finite-diameter solenoids. We studied how Lorenz force, which was formed by the inhomogeneous magnetic fields, modified convection of the melt and oxygen transfer as a function of relative position between the solenoids and the melt. We showed the possibility that oxygen concentration in the melt and near the solid-liquid interface can be controlled by relative position between the melt and the inhomogeneous transverse-magnetic fields. We discuss the effects of Lorenz force and electric potential distributions on the melt and oxygen transfer on the basis of calculated results obtained by three-dimensional and time-dependent calculation.