Oxygen distribution in silicon melt under inhomogeneous transverse-magnetic fields

K. Kakimoto

研究成果: ジャーナルへの寄稿会議記事査読

33 被引用数 (Scopus)


This paper aims to report an effect on inhomogeneous transverse-magnetic fields to melt convection and oxygen distribution in silicon melt and at a solid-liquid interface during single crystal growth. The inhomogeneous transverse-magnetic fields were obtained by the calculation based on Biot-Savart equation with an assumption of finite-diameter solenoids. We studied how Lorenz force, which was formed by the inhomogeneous magnetic fields, modified convection of the melt and oxygen transfer as a function of relative position between the solenoids and the melt. We showed the possibility that oxygen concentration in the melt and near the solid-liquid interface can be controlled by relative position between the melt and the inhomogeneous transverse-magnetic fields. We discuss the effects of Lorenz force and electric potential distributions on the melt and oxygen transfer on the basis of calculated results obtained by three-dimensional and time-dependent calculation.

ジャーナルJournal of Crystal Growth
出版ステータス出版済み - 8月 2001

!!!All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学


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