Ordering distance of surface nanofacets on vicinal 4H-SiC(0001)

Masahiro Fujii, Tanaka Satoru

研究成果: ジャーナルへの寄稿学術誌査読

36 被引用数 (Scopus)

抄録

After high-temperature H2 etching, vicinal SiC(0001) surfaces showed periodically ordered nanofacet structures consisting of pairs of (0001) and (112̄n). Here, we found that the characteristic ordering distance of ∼10nm is independent of the vicinal angle (4°-8°off). However, fluctuation in the ordering distance is dependent on the vicinal angle. The 5.7°off surface showed superior periodicity. The classical elastic theory of a surface predicted the characteristic (constant) ordering distance but not the fluctuation in ordering periodicity. By introducing "quantized step bunching" due to periodic surface energy, which is unique to polymorphic SiC, the fluctuation is described.

本文言語英語
論文番号016102
ジャーナルPhysical Review Letters
99
1
DOI
出版ステータス出版済み - 7月 5 2007

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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