Optical characterization of the "E2" deep level in GaN

P. Hacke; P. Ramvall; S. Tanaka; Y. Aoyagi; A. Kuramata; K. Horino; H. Munekata

doi:10.1063/1.123180

Optical characterization of the "E2" deep level in GaN

P. Hacke
, P. Ramvall
, S. Tanaka
, Y. Aoyagi
, A. Kuramata
, K. Horino
, H. Munekata

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

21 被引用数 (Scopus)

抄録

The correspondence between the E2 level (∼E_c-0.55 eV) in n-type GaN undergoing thermoionization and photoionizution was established. The optical cross section in the vicinity of the threshold for photoionization of this level was measured by means of capacitance transient spectroscopy. Analysis using the formulation of Chantre yielded the optical activation energy, E^o=0.85 eV, and the Franck-Condon parameter, d_FC=0.30 eV at 90 K.

本文言語	英語
ページ（範囲）	543-545
ページ数	3
ジャーナル	Applied Physics Letters
巻	74
号	4
DOI	https://doi.org/10.1063/1.123180
出版ステータス	出版済み - 1月 25 1999
外部発表	はい

!!!All Science Journal Classification (ASJC) codes

物理学および天文学（その他）

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10.1063/1.123180

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引用スタイル

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abstract = "The correspondence between the E2 level (∼Ec-0.55 eV) in n-type GaN undergoing thermoionization and photoionizution was established. The optical cross section in the vicinity of the threshold for photoionization of this level was measured by means of capacitance transient spectroscopy. Analysis using the formulation of Chantre yielded the optical activation energy, Eo=0.85 eV, and the Franck-Condon parameter, dFC=0.30 eV at 90 K.",

author = "P. Hacke and P. Ramvall and S. Tanaka and Y. Aoyagi and A. Kuramata and K. Horino and H. Munekata",

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T1 - Optical characterization of the "E2" deep level in GaN

AU - Hacke, P.

AU - Ramvall, P.

AU - Tanaka, S.

AU - Aoyagi, Y.

AU - Kuramata, A.

AU - Horino, K.

AU - Munekata, H.

PY - 1999/1/25

Y1 - 1999/1/25

N2 - The correspondence between the E2 level (∼Ec-0.55 eV) in n-type GaN undergoing thermoionization and photoionizution was established. The optical cross section in the vicinity of the threshold for photoionization of this level was measured by means of capacitance transient spectroscopy. Analysis using the formulation of Chantre yielded the optical activation energy, Eo=0.85 eV, and the Franck-Condon parameter, dFC=0.30 eV at 90 K.

AB - The correspondence between the E2 level (∼Ec-0.55 eV) in n-type GaN undergoing thermoionization and photoionizution was established. The optical cross section in the vicinity of the threshold for photoionization of this level was measured by means of capacitance transient spectroscopy. Analysis using the formulation of Chantre yielded the optical activation energy, Eo=0.85 eV, and the Franck-Condon parameter, dFC=0.30 eV at 90 K.

UR - https://www.scopus.com/pages/publications/0033601589

UR - https://www.scopus.com/pages/publications/0033601589#tab=citedBy

U2 - 10.1063/1.123180

DO - 10.1063/1.123180

M3 - Article

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SN - 0003-6951

VL - 74

SP - 543

EP - 545

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Optical characterization of the "E2" deep level in GaN

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!!!All Science Journal Classification (ASJC) codes

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