Operation mechanism on SiGe/Si/Si PIN diodes explained using numerical simulation

Fumihiko Hirose, Kazunari Kurita, Yutaka Takahashi, Masashi Mukaida

    研究成果: ジャーナルへの寄稿学術誌査読

    6 被引用数 (Scopus)

    抄録

    Fast recovery characteristics can be obtained in SiGe/Si/Si pin diodes compared to conventional Si pin diodes without any intentional lifetime controls into the i-layers. In the present pin diodes, the tradeoff between the fast recovery and the low forward voltage drop, which is inherent in the conventional pin diodes, can be effectively eliminated. The present diodes allow low power dissipation with fast operation in the switching circuits. The ID device simulation suggests that the thin SiGe p-layer with a suppressed minority carrier lifetime enhances the diffusion current in the SiGe pin diode, where the stored minority carrier effectively decreases in the Si i-layer.

    本文言語英語
    ページ(範囲)G160-G163
    ジャーナルElectrochemical and Solid-State Letters
    8
    7
    DOI
    出版ステータス出版済み - 2005

    !!!All Science Journal Classification (ASJC) codes

    • 化学工学一般
    • 材料科学一般
    • 物理化学および理論化学
    • 電気化学
    • 電子工学および電気工学

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