Current density-voltage characteristics of hole-only devices are influenced by thicknesses of molybdenum dioxide (MoO2) and molybdenum trioxide (MoO3) as buffer layers. A space-charge-limited current of N, N′ -diphenyl- N, N′ -bis(1-naphthyl)- 1, 1′ -biphenyl- 4, 4′ -diamine (α-NPD) is observed in a wide range of MoO2 thicknesses from 0.25 to 10 nm and at a specific MoO3 thickness of 0.75 nm. Charge transfer characteristics at interfaces of MoO2 /α-NPD and MoO3 /α-NPD are investigated from changes in fluorescence intensity of α-NPD. Reasons of the improved device characteristics are discussed in terms of interfacial charge generation composed of charged transfer and charge separation.
!!!All Science Journal Classification (ASJC) codes