TY - JOUR
T1 - Observation of space-charge-limited current due to charge generation at interface of molybdenum dioxide and organic layer
AU - Matsushima, Toshinori
AU - Murata, Hideyuki
N1 - Funding Information:
We thank Professor Tetsuo Tsutsui (Kyusyu University), Professor Hisao Ishii (Chiba University), and Professor Musubu Ichikawa (Shinsyu University) for useful discussion. This work was partially supported by a Grant-in-Aid (No. 20241034) and Scientific Research on Innovative Areas (“pi-Space”) (No. 20108012) from the Ministry of Education, Culture, Sports, Science, and Technology, Japan.
PY - 2009
Y1 - 2009
N2 - Current density-voltage characteristics of hole-only devices are influenced by thicknesses of molybdenum dioxide (MoO2) and molybdenum trioxide (MoO3) as buffer layers. A space-charge-limited current of N, N′ -diphenyl- N, N′ -bis(1-naphthyl)- 1, 1′ -biphenyl- 4, 4′ -diamine (α-NPD) is observed in a wide range of MoO2 thicknesses from 0.25 to 10 nm and at a specific MoO3 thickness of 0.75 nm. Charge transfer characteristics at interfaces of MoO2 /α-NPD and MoO3 /α-NPD are investigated from changes in fluorescence intensity of α-NPD. Reasons of the improved device characteristics are discussed in terms of interfacial charge generation composed of charged transfer and charge separation.
AB - Current density-voltage characteristics of hole-only devices are influenced by thicknesses of molybdenum dioxide (MoO2) and molybdenum trioxide (MoO3) as buffer layers. A space-charge-limited current of N, N′ -diphenyl- N, N′ -bis(1-naphthyl)- 1, 1′ -biphenyl- 4, 4′ -diamine (α-NPD) is observed in a wide range of MoO2 thicknesses from 0.25 to 10 nm and at a specific MoO3 thickness of 0.75 nm. Charge transfer characteristics at interfaces of MoO2 /α-NPD and MoO3 /α-NPD are investigated from changes in fluorescence intensity of α-NPD. Reasons of the improved device characteristics are discussed in terms of interfacial charge generation composed of charged transfer and charge separation.
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U2 - 10.1063/1.3267082
DO - 10.1063/1.3267082
M3 - Article
AN - SCOPUS:70450233658
SN - 0003-6951
VL - 95
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 20
M1 - 203306
ER -