Numerical analysis of dislocation density and residual stress in a GaN single crystal during the cooling process

In this study, we investigate the influence of thermal stress on the dislocation density and residual stress in GaN single crystals by numerical analysis. The results show that the dislocation density increases, but the thermal stress does not decrease, and the residual stress increases throughout the cooling process. The reason for this phenomenon is that the dislocation density is higher at the periphery of the crystal and distribution of dislocation density in the crystal is inhomogeneous. Then, the increase of dislocation does not allow the thermal stress on the entire crystal to relax.