Nonradiative recombination processes of carriers in InGaN/GaN probed by the microscopic transient lens spectroscopy

Koichi Okamoto; Kenichi Inoue; Yoichi Kawakami; Shigeo Fujita; Masahide Terazima; Ayumu Tsujimura; Isao Kidoguchi

doi:10.1063/1.1519666

Nonradiative recombination processes of carriers in InGaN/GaN probed by the microscopic transient lens spectroscopy

Koichi Okamoto, Kenichi Inoue, Yoichi Kawakami, Shigeo Fujita, Masahide Terazima, Ayumu Tsujimura, Isao Kidoguchi

物質基盤化学部門

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

13 被引用数 (Scopus)

抄録

A study was performed on the nonradiative recombination (NR) processes of carriers in InGaN/GaN probed by the microscopic transient lens spectroscopy. The signal intensities and the time profiles were used to detect the heat generations and conductivities of NR processes. The results showed that the amount of heat generated at the wing regions was much smaller than that at the seed regions.

本文言語	英語
ページ（範囲）	575-577
ページ数	3
ジャーナル	Review of Scientific Instruments
巻	74
号	1 II
DOI	https://doi.org/10.1063/1.1519666
出版ステータス	出版済み - 1月 2003

!!!All Science Journal Classification (ASJC) codes

器械工学

文献へのアクセス

10.1063/1.1519666

他のファイルとリンク

引用スタイル

@article{38a8d357abde49de922969e23abe36a0,

title = "Nonradiative recombination processes of carriers in InGaN/GaN probed by the microscopic transient lens spectroscopy",

abstract = "A study was performed on the nonradiative recombination (NR) processes of carriers in InGaN/GaN probed by the microscopic transient lens spectroscopy. The signal intensities and the time profiles were used to detect the heat generations and conductivities of NR processes. The results showed that the amount of heat generated at the wing regions was much smaller than that at the seed regions.",

author = "Koichi Okamoto and Kenichi Inoue and Yoichi Kawakami and Shigeo Fujita and Masahide Terazima and Ayumu Tsujimura and Isao Kidoguchi",

year = "2003",

month = jan,

doi = "10.1063/1.1519666",

language = "English",

volume = "74",

pages = "575--577",

journal = "Review of Scientific Instruments",

issn = "0034-6748",

publisher = "American Institute of Physics Publising LLC",

number = "1 II",

}

TY - JOUR

T1 - Nonradiative recombination processes of carriers in InGaN/GaN probed by the microscopic transient lens spectroscopy

AU - Okamoto, Koichi

AU - Inoue, Kenichi

AU - Kawakami, Yoichi

AU - Fujita, Shigeo

AU - Terazima, Masahide

AU - Tsujimura, Ayumu

AU - Kidoguchi, Isao

PY - 2003/1

Y1 - 2003/1

N2 - A study was performed on the nonradiative recombination (NR) processes of carriers in InGaN/GaN probed by the microscopic transient lens spectroscopy. The signal intensities and the time profiles were used to detect the heat generations and conductivities of NR processes. The results showed that the amount of heat generated at the wing regions was much smaller than that at the seed regions.

AB - A study was performed on the nonradiative recombination (NR) processes of carriers in InGaN/GaN probed by the microscopic transient lens spectroscopy. The signal intensities and the time profiles were used to detect the heat generations and conductivities of NR processes. The results showed that the amount of heat generated at the wing regions was much smaller than that at the seed regions.

UR - http://www.scopus.com/inward/record.url?scp=0037286084&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037286084&partnerID=8YFLogxK

U2 - 10.1063/1.1519666

DO - 10.1063/1.1519666

M3 - Article

AN - SCOPUS:0037286084

SN - 0034-6748

VL - 74

SP - 575

EP - 577

JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

IS - 1 II

ER -

Nonradiative recombination processes of carriers in InGaN/GaN probed by the microscopic transient lens spectroscopy

抄録

!!!All Science Journal Classification (ASJC) codes

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル