Ni suicide and germanide technology for contacts and metal gates in MOSFET applications

Shigeaki Zaima; Osamu Nakatsuka; Hiroki Kondo; Mitsuo Sakashita; Akira Sakai; Masaki Ogawa

doi:10.1109/ICSICT.2006.306218

Ni suicide and germanide technology for contacts and metal gates in MOSFET applications

Shigeaki Zaima
, Osamu Nakatsuka
, Hiroki Kondo
, Mitsuo Sakashita
, Akira Sakai
, Masaki Ogawa

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

本文言語	英語
ホスト出版物のタイトル	ICSICT-2006
ホスト出版物のサブタイトル	2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
出版社	IEEE Computer Society
ページ	322-325
ページ数	4
ISBN（印刷版）	1424401615, 9781424401611
DOI	https://doi.org/10.1109/ICSICT.2006.306218
出版ステータス	出版済み - 2006
外部発表	はい
イベント	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, 中国継続期間: 10月 23 2006 → 10月 26 2006

出版物シリーズ

名前	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

その他

その他	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
国/地域	中国
City	Shanghai
Period	10/23/06 → 10/26/06

UN SDG

この成果は、次の持続可能な開発目標に貢献しています

SDG 3 すべての人に健康と福祉を

!!!All Science Journal Classification (ASJC) codes

電子工学および電気工学

文献へのアクセス

10.1109/ICSICT.2006.306218

他のファイルとリンク

引用スタイル

Zaima, S., Nakatsuka, O., Kondo, H., Sakashita, M., Sakai, A., & Ogawa, M. (2006). Ni suicide and germanide technology for contacts and metal gates in MOSFET applications. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 322-325). 記事 4098097 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). IEEE Computer Society. https://doi.org/10.1109/ICSICT.2006.306218

Ni suicide and germanide technology for contacts and metal gates in MOSFET applications. / Zaima, Shigeaki; Nakatsuka, Osamu; Kondo, Hiroki その他.
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. p. 322-325 4098097 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

Zaima, S, Nakatsuka, O, Kondo, H, Sakashita, M, Sakai, A & Ogawa, M 2006, Ni suicide and germanide technology for contacts and metal gates in MOSFET applications. in ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 4098097, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, IEEE Computer Society, pp. 322-325, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Shanghai, 中国, 10/23/06. https://doi.org/10.1109/ICSICT.2006.306218

Zaima S, Nakatsuka O, Kondo H, Sakashita M, Sakai A, Ogawa M. Ni suicide and germanide technology for contacts and metal gates in MOSFET applications. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society. 2006. p. 322-325. 4098097. (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2006.306218

Zaima, Shigeaki ; Nakatsuka, Osamu ; Kondo, Hiroki その他. / Ni suicide and germanide technology for contacts and metal gates in MOSFET applications. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. pp. 322-325 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

@inproceedings{457d1b9afbc54807850f8758939d9fae,

title = "Ni suicide and germanide technology for contacts and metal gates in MOSFET applications",

author = "Shigeaki Zaima and Osamu Nakatsuka and Hiroki Kondo and Mitsuo Sakashita and Akira Sakai and Masaki Ogawa",

year = "2006",

doi = "10.1109/ICSICT.2006.306218",

language = "English",

isbn = "1424401615",

series = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

publisher = "IEEE Computer Society",

pages = "322--325",

booktitle = "ICSICT-2006",

address = "United States",

note = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 23-10-2006 Through 26-10-2006",

}

TY - GEN

T1 - Ni suicide and germanide technology for contacts and metal gates in MOSFET applications

AU - Zaima, Shigeaki

AU - Nakatsuka, Osamu

AU - Kondo, Hiroki

AU - Sakashita, Mitsuo

AU - Sakai, Akira

AU - Ogawa, Masaki

PY - 2006

Y1 - 2006

UR - https://www.scopus.com/pages/publications/34547260163

UR - https://www.scopus.com/pages/publications/34547260163#tab=citedBy

U2 - 10.1109/ICSICT.2006.306218

DO - 10.1109/ICSICT.2006.306218

M3 - Conference contribution

AN - SCOPUS:34547260163

SN - 1424401615

SN - 9781424401611

T3 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

SP - 322

EP - 325

BT - ICSICT-2006

PB - IEEE Computer Society

T2 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology

Y2 - 23 October 2006 through 26 October 2006

ER -