Nanopore formation on SOI(100) by CH3SiH3 pulse jet CVD:SiC growth temperature dependence

Yoshifumi Ikoma, Yuta Nishino, Shouhei Anan, Toshiaki Abe, Hirofumi Sakita

    研究成果: 書籍/レポート タイプへの寄稿会議への寄与

    抄録

    We investigated the formation of nanopores on top Si layers of silicon on insulatorsubstrates by CH3SiH3 pulse jet chemical vapor deposition. Nanopores were obtained by chemicaletching of the buried oxide layer below the pits which were introduced during the SiC growth. Thehigh nanopore density was obtained when the SiC growth temperature was set at 925 °C. Thenanopore density gradually decreased with increasing the temperature at higher SiC growthtemperature. The pore size increased with increasing the SiC growth temperature. These resultssuggest that pore density and size strongly depend on the SiC growth temperature.

    本文言語英語
    ホスト出版物のタイトルAdvanced Materials Science and Technology
    出版社Trans Tech Publications Ltd
    ページ252-255
    ページ数4
    ISBN(印刷版)9783037856604
    DOI
    出版ステータス出版済み - 2013
    イベント8th International Forum on Advanced Materials Science and Technology, IFAMST 2012 - Fukuoka City, 日本
    継続期間: 8月 1 20128月 4 2012

    出版物シリーズ

    名前Materials Science Forum
    750
    ISSN(印刷版)0255-5476
    ISSN(電子版)1662-9752

    その他

    その他8th International Forum on Advanced Materials Science and Technology, IFAMST 2012
    国/地域日本
    CityFukuoka City
    Period8/1/128/4/12

    !!!All Science Journal Classification (ASJC) codes

    • 材料科学一般
    • 凝縮系物理学
    • 材料力学
    • 機械工学

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