Multiexponential and Spectral Analysis of Carrier Emission Processes from Co-Related Deep Levels in p-Silicon

Both multiexponential (ME-) and spectral (SA-) analysis of DLTS are applied to analyze transient capacitance wave forms due to deep Co-related levels in p-Si. The higher-temperature F-peak observed in conventional DLTS is clearly resolved into two closely spaced components. Moerever, it is found that one of these components has a quite different emission rate spectrum (F₂) from the almost discrete one of the other component (F₁). The emission rate spectrum for F₂shows features of model centers with distributed activation enhergy and/or capture cross section. The analysis gives deep-level parameters in good agreement with those obtained by one of the authors (H.N.) from the dependence of transient capacitance amplitudes on the width of the injecting pulse. The results demonstrate the capability of ME- and SA-DLTS in resolving closely spaced level with much less effort.