TY - JOUR
T1 - Monotonic decrease of Tcs with thinning of the superconducting MgB2 layer in MgB2/Ni and MgB2/B alternately-layered thin films
AU - Doi, T.
AU - Kitaguchi, H.
AU - Hata, S.
AU - Fukuyama, K.
AU - Masuda, K.
AU - Takahashi, K.
AU - Yoshidome, T.
AU - Hakuraku, Y.
AU - Kuwano, N.
PY - 2007/12/1
Y1 - 2007/12/1
N2 - We prepared MgB2/Ni and MgB2/B alternately-layered films using electron beam evaporation and coaxial vacuum arc evaporation techniques without any post-annealing. The thickness of each MgB2 layer was designed to be 42, 24 or 15nm for both MgB2/Ni and MgB 2/B alternately-layered films. We confirmed that the layered structure was successfully obtained from the scanning transmission electron microscopic cross-sectional image of the MgB2/Ni alternately-layered film. The critical temperature, Tc, of the alternately-layered film decreased as the MgB2 layer became thinner, for both MgB 2/Ni and MgB2/B films. Moreover, the Tc was affected by only the MgB2 layer thickness, and was independent of the inserted layer materials.
AB - We prepared MgB2/Ni and MgB2/B alternately-layered films using electron beam evaporation and coaxial vacuum arc evaporation techniques without any post-annealing. The thickness of each MgB2 layer was designed to be 42, 24 or 15nm for both MgB2/Ni and MgB 2/B alternately-layered films. We confirmed that the layered structure was successfully obtained from the scanning transmission electron microscopic cross-sectional image of the MgB2/Ni alternately-layered film. The critical temperature, Tc, of the alternately-layered film decreased as the MgB2 layer became thinner, for both MgB 2/Ni and MgB2/B films. Moreover, the Tc was affected by only the MgB2 layer thickness, and was independent of the inserted layer materials.
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U2 - 10.1088/0953-2048/20/12/023
DO - 10.1088/0953-2048/20/12/023
M3 - Article
AN - SCOPUS:36348976899
SN - 0953-2048
VL - 20
SP - 1223
EP - 1227
JO - Superconductor Science and Technology
JF - Superconductor Science and Technology
IS - 12
ER -