Modulation voltage of high t_c DC superconducting quantum interference device with damping resistance

The effect of damping resistance on the voltage versus flux (V–ϕ) relation of the high T_c dc superconducting quantum interference device (SQUID) is studied experimentally. Dc SQUID using YBaCuO step-edge junction and damping resistance in parallel with SQUID inductance is fabricated. Measured values of modulation voltage in the V–ϕ relation are compared with those of the conventional SQUID without damping resistance. It is shown that modulation voltage is much improved by using damping resistance. The obtained experimental results agree reasonably with theoretical predictions reported previously.