Modulating Electrical Properties of InAs Nanowires via Molecular Monolayers

Ho Yuen Cheung, Senpo Yip, Ning Han, Goufa Dong, Ming Fang, Zai Xing Yang, Fengyun Wang, Hao Lin, Chun Yuen Wong, Johnny C. Ho

研究成果: ジャーナルへの寄稿学術誌査読

30 被引用数 (Scopus)

抄録

In recent years, InAs nanowires have been demonstrated with the excellent electron mobility as well as highly efficient near-infrared and visible photoresponse at room temperature. However, due to the presence of a large amount of surface states that originate from the unstable native oxide, the fabricated nanowire transistors are always operated in the depletion mode with degraded electron mobility, which is not energy-efficient. In this work, instead of the conventional inorganic sulfur or alkanethiol surface passivation, we employ aromatic thiolate (ArS-)-based molecular monolayers with controllable molecular design and electron density for the surface modification of InAs nanowires (i.e., device channels) by simple wet chemistry. More importantly, besides reliably improving the device performances by enhancing the electron mobility and the current on-off ratio through surface state passivation, the device threshold voltage (VTh) can also be modulated by varying the para-substituent of the monolayers such that the molecule bearing electron-withdrawing groups would significantly shift the VTh towards the positive region for the enhancement mode device operation, in which the effect has been quantified by density functional theory calculations. These findings reveal explicitly the efficient modulation of the InAs nanowires' electronic transport properties via ArS--based molecular monolayers, which further elucidates the technological potency of this ArS- surface treatment for future nanoelectronic device fabrication and circuit integration.

本文言語英語
ページ(範囲)7545-7552
ページ数8
ジャーナルACS nano
9
7
DOI
出版ステータス出版済み - 7月 28 2015
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 材料科学一般
  • 工学一般
  • 物理学および天文学一般

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