Modeling High Frequency 13.56 MHz Full Bridge Inverter Based on GaN MOSFET for EV Wireless Charging System

Meiyanto Eko Sulistyo, Gustav Lukman Adhi Pradhityo, Aam Muharam, Asep Nugroho, Amin, Sunarto Kaleg, Alexander Christhanto Budiman, Sudirja, Rina Ristiana, Reiji Hattori

    研究成果: ジャーナルへの寄稿学術誌査読

    2 被引用数 (Scopus)

    抄録

    This paper presents a modelling of a high-frequency full bridge inverter for wireless power transmission (WPT) in Electric Vehicle (EV) charging applications. The inverter is designated at an operating frequency as high as 13.56 MHz in line with regulations for the industrial, scientific, and medical radio band (ISM band). Since the power is transferred wirelessly from the source to the EV, a coupling capacitive was used as a transmitter and receiver of the system. In this paper, the inverter model was simulated and analysed using LTSpice software. Different load changes and power are injected into the system. Furthermore, in order to obtain a robust system, the switching frequency of 13.56 MHz is used with some Dead Time (DT). The system already uses GaN MOSFETs for reliability and performance at high frequencies, in addition to LC impedance matching. The result is that by operating at a resonant frequency of 13.56 MHz with a resistive load of 50, it is obtained with a power of 2.3 kW that has been successfully transmitted with an efficiency of 89%.

    本文言語英語
    ページ(範囲)1847-1854
    ページ数8
    ジャーナルEvergreen
    10
    3
    DOI
    出版ステータス出版済み - 9月 2023

    !!!All Science Journal Classification (ASJC) codes

    • 電子材料、光学材料、および磁性材料
    • セラミックおよび複合材料
    • 表面、皮膜および薄膜
    • マネジメント、モニタリング、政策と法律

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