Micro field emitter with nano-pillarets formed by RIE of photoresist

A. Baba; T. Yoshida; T. Asano

doi:10.1109/IMNC.2002.1178678

Micro field emitter with nano-pillarets formed by RIE of photoresist

A. Baba, T. Yoshida, T. Asano

日本エジプト科学技術連携センター

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

抄録

We report for the first time the fabrication and emission characteristics of a gated micro-cold cathode whose emitter is made of nano-pillarets. We successfully fabricated the gated nano-pillarets emitter using a self-aligned formation process and the field electron emission from the gated emitter was demonstrated.

本文言語	英語
ホスト出版物のタイトル	2002 International Microprocesses and Nanotechnology Conference, MNC 2002
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	332-333
ページ数	2
ISBN（電子版）	4891140313, 9784891140311
DOI	https://doi.org/10.1109/IMNC.2002.1178678
出版ステータス	出版済み - 1月 1 2002
イベント	International Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, 日本継続期間: 11月 6 2002 → 11月 8 2002

その他

その他	International Microprocesses and Nanotechnology Conference, MNC 2002
国/地域	日本
City	Tokyo
Period	11/6/02 → 11/8/02

!!!All Science Journal Classification (ASJC) codes

ハードウェアとアーキテクチャ
電子工学および電気工学

文献へのアクセス

10.1109/IMNC.2002.1178678

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引用スタイル

Baba, A, Yoshida, T & Asano, T 2002, Micro field emitter with nano-pillarets formed by RIE of photoresist. in 2002 International Microprocesses and Nanotechnology Conference, MNC 2002., 1178678, Institute of Electrical and Electronics Engineers Inc., pp. 332-333, International Microprocesses and Nanotechnology Conference, MNC 2002, Tokyo, 日本, 11/6/02. https://doi.org/10.1109/IMNC.2002.1178678

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title = "Micro field emitter with nano-pillarets formed by RIE of photoresist",

abstract = "We report for the first time the fabrication and emission characteristics of a gated micro-cold cathode whose emitter is made of nano-pillarets. We successfully fabricated the gated nano-pillarets emitter using a self-aligned formation process and the field electron emission from the gated emitter was demonstrated.",

author = "A. Baba and T. Yoshida and T. Asano",

year = "2002",

month = jan,

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doi = "10.1109/IMNC.2002.1178678",

language = "English",

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booktitle = "2002 International Microprocesses and Nanotechnology Conference, MNC 2002",

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note = "International Microprocesses and Nanotechnology Conference, MNC 2002 ; Conference date: 06-11-2002 Through 08-11-2002",

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AU - Baba, A.

AU - Yoshida, T.

AU - Asano, T.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - We report for the first time the fabrication and emission characteristics of a gated micro-cold cathode whose emitter is made of nano-pillarets. We successfully fabricated the gated nano-pillarets emitter using a self-aligned formation process and the field electron emission from the gated emitter was demonstrated.

AB - We report for the first time the fabrication and emission characteristics of a gated micro-cold cathode whose emitter is made of nano-pillarets. We successfully fabricated the gated nano-pillarets emitter using a self-aligned formation process and the field electron emission from the gated emitter was demonstrated.

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U2 - 10.1109/IMNC.2002.1178678

DO - 10.1109/IMNC.2002.1178678

M3 - Conference contribution

AN - SCOPUS:84960375515

SP - 332

EP - 333

BT - 2002 International Microprocesses and Nanotechnology Conference, MNC 2002

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Microprocesses and Nanotechnology Conference, MNC 2002

Y2 - 6 November 2002 through 8 November 2002

ER -

Micro field emitter with nano-pillarets formed by RIE of photoresist

抄録

その他

!!!All Science Journal Classification (ASJC) codes

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