TY - JOUR
T1 - MESFET’s on a GaAs-on-Insulator Structure
AU - Tsutsui, Kazuo
AU - Nakazawa, Tadao
AU - Asano, Tanemasa
AU - Ishiwara, Hiroshi
AU - Furukawa, Seijiro
N1 - Funding Information:
Manuscript received February 11, 1987; revised April 9, 1987. This work was supported by a grant-in-aid for special distinguished research (59060002) from the Ministry of Education, Science, and Culture of Japan. The authors are with the Department of Applied Electronics, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 227, Japan. IEEE Log Number 8715236.
PY - 1987/6
Y1 - 1987/6
N2 - MESFET’s were fabricated on a GaAs-on-insulator structure which was grown by molecular beam epitaxy (MBE) on a GaAs substrate covered with a crystalline insulator film, CaxSri1-x,F2. The gmvalue of 71 mS/mm was obtained for an FET with a gate length of 3 μm. Complete isolation of MESFET’s by island formation of GaAs on the fluoride films was also attained for the first time using a conventional wet etching process.
AB - MESFET’s were fabricated on a GaAs-on-insulator structure which was grown by molecular beam epitaxy (MBE) on a GaAs substrate covered with a crystalline insulator film, CaxSri1-x,F2. The gmvalue of 71 mS/mm was obtained for an FET with a gate length of 3 μm. Complete isolation of MESFET’s by island formation of GaAs on the fluoride films was also attained for the first time using a conventional wet etching process.
UR - https://www.scopus.com/pages/publications/0023367292
UR - https://www.scopus.com/pages/publications/0023367292#tab=citedBy
U2 - 10.1109/EDL.1987.26629
DO - 10.1109/EDL.1987.26629
M3 - Article
AN - SCOPUS:0023367292
SN - 0741-3106
VL - EDL-8
SP - 277
EP - 279
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 6
ER -