Memristive switching phenomena in a single oxide nanowire

Takeshi Yanagida

doi:10.1109/NMDC.2011.6155307

Memristive switching phenomena in a single oxide nanowire

Takeshi Yanagida

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

2 被引用数 (Scopus)

抄録

Electrically driven resistive switching (RS) in metal/oxide/metal junctions, so-called ReRAM and/or Memristor, has attracted much attention due to the potential applications toward next-generation nonvolatile memory devices. However the lack of nanoscale RS mechanism has been held back the range of practical applications. Here we demonstrate the nonvolatile RS in a single oxide nanowire (CoO _x, NiO _x, TiO ₂) with 10 nm scale and the experimentally revealed nanoscale RS mechanism. The approach using oxide nanowire offers a platform not only to investigate the intrinsic characteristics of RS but also to tailor the RS properties for next-generation memory devices.

本文言語	英語
ホスト出版物のタイトル	2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
ページ	28-31
ページ数	4
DOI	https://doi.org/10.1109/NMDC.2011.6155307
出版ステータス	出版済み - 12月 1 2011
外部発表	はい
イベント	2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011 - Jeju, 韓国継続期間: 10月 18 2011 → 10月 21 2011

出版物シリーズ

名前	2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011

その他

その他	2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
国/地域	韓国
City	Jeju
Period	10/18/11 → 10/21/11

!!!All Science Journal Classification (ASJC) codes

材料科学（全般）

文献へのアクセス

10.1109/NMDC.2011.6155307

他のファイルとリンク

引用スタイル

Yanagida, T 2011, Memristive switching phenomena in a single oxide nanowire. in 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011., 6155307, 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011, pp. 28-31, 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011, Jeju, 韓国, 10/18/11. https://doi.org/10.1109/NMDC.2011.6155307

@inproceedings{b28da3dc81e045bbb4076f1011e2c931,

title = "Memristive switching phenomena in a single oxide nanowire",

abstract = "Electrically driven resistive switching (RS) in metal/oxide/metal junctions, so-called ReRAM and/or Memristor, has attracted much attention due to the potential applications toward next-generation nonvolatile memory devices. However the lack of nanoscale RS mechanism has been held back the range of practical applications. Here we demonstrate the nonvolatile RS in a single oxide nanowire (CoO x, NiO x, TiO 2) with 10 nm scale and the experimentally revealed nanoscale RS mechanism. The approach using oxide nanowire offers a platform not only to investigate the intrinsic characteristics of RS but also to tailor the RS properties for next-generation memory devices.",

author = "Takeshi Yanagida",

year = "2011",

month = dec,

day = "1",

doi = "10.1109/NMDC.2011.6155307",

language = "English",

isbn = "9781457721397",

series = "2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011",

pages = "28--31",

booktitle = "2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011",

note = "2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011 ; Conference date: 18-10-2011 Through 21-10-2011",

}

TY - GEN

T1 - Memristive switching phenomena in a single oxide nanowire

AU - Yanagida, Takeshi

PY - 2011/12/1

Y1 - 2011/12/1

N2 - Electrically driven resistive switching (RS) in metal/oxide/metal junctions, so-called ReRAM and/or Memristor, has attracted much attention due to the potential applications toward next-generation nonvolatile memory devices. However the lack of nanoscale RS mechanism has been held back the range of practical applications. Here we demonstrate the nonvolatile RS in a single oxide nanowire (CoO x, NiO x, TiO 2) with 10 nm scale and the experimentally revealed nanoscale RS mechanism. The approach using oxide nanowire offers a platform not only to investigate the intrinsic characteristics of RS but also to tailor the RS properties for next-generation memory devices.

AB - Electrically driven resistive switching (RS) in metal/oxide/metal junctions, so-called ReRAM and/or Memristor, has attracted much attention due to the potential applications toward next-generation nonvolatile memory devices. However the lack of nanoscale RS mechanism has been held back the range of practical applications. Here we demonstrate the nonvolatile RS in a single oxide nanowire (CoO x, NiO x, TiO 2) with 10 nm scale and the experimentally revealed nanoscale RS mechanism. The approach using oxide nanowire offers a platform not only to investigate the intrinsic characteristics of RS but also to tailor the RS properties for next-generation memory devices.

UR - http://www.scopus.com/inward/record.url?scp=84860484921&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84860484921&partnerID=8YFLogxK

U2 - 10.1109/NMDC.2011.6155307

DO - 10.1109/NMDC.2011.6155307

M3 - Conference contribution

AN - SCOPUS:84860484921

SN - 9781457721397

T3 - 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011

SP - 28

EP - 31

BT - 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011

T2 - 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011

Y2 - 18 October 2011 through 21 October 2011

ER -

Memristive switching phenomena in a single oxide nanowire

抄録

出版物シリーズ

その他

!!!All Science Journal Classification (ASJC) codes

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル