Mass density control of carbon films deposited by H-assisted plasma CVD method

Tatsuya Urakawa, Hidehumi Matsuzaki, Daisuke Yamashita, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara, Makoto Sekine, Masaru Hori

研究成果: ジャーナルへの寄稿学術誌査読

6 被引用数 (Scopus)

抄録

In order to obtain high density carbon films with keeping anisotropic deposition profile on trench substrates, we control mass density of carbon films deposited by a H-assisted plasma chemical vapor deposition (CVD) method by ion kinetic energy of ions irradiating on film surface during deposition. The highest mass density of 2.14g/cm3 is obtained for deposition under the ion energy of 75eV and it is 1.4 times as high as that for the ion energy of 32eV. We also have studied etching rate of these films using H2+N2 discharge plasmas. The lowest etch rate of 1.8nm/min is obtained for the ion energy of 75eV and it is 2.8 times as low as that for the ion energy of 32eV. Etching rate of carbon films decreases exponentially with increasing the mass density of carbon films. Control of ion energy is the key to obtain high mass density carbon films with keeping anisotropic deposition profile on trench substrates.

本文言語英語
ページ(範囲)S15-S18
ジャーナルSurface and Coatings Technology
228
SUPPL.1
DOI
出版ステータス出版済み - 8月 15 2013

!!!All Science Journal Classification (ASJC) codes

  • 化学一般
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学

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