Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator

Kouta Takahashi; Hiroshi Ikenoue; Mitsuo Sakashita; Osamu Nakatsuka; Shigeaki Zaima; Masashi Kurosawa

doi:10.1109/EDTM.2018.8421488

Low thermal budget fabrication of poly-Ge_1-xSn_x thin film thermoelectric generator

Kouta Takahashi
, Hiroshi Ikenoue
, Mitsuo Sakashita
, Osamu Nakatsuka
, Shigeaki Zaima
, Masashi Kurosawa

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

2 被引用数 (Scopus)

抄録

We have investigated thermoelectric (TE) properties of poly-Ge1-xSnx layers prepared with pulsed laser annealing in water. Even for polycrystalline layers, relatively high power factors of 0.37 and 0.92 mWK^-2m^-1 were obtained for p- and n-type poly-Ge1-xSnx layers, respectively. The Ge1-xSnx-based TE generator has been firstly fabricated blow the process temperature of 300 °C.

本文言語	英語
ホスト出版物のタイトル	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	313-315
ページ数	3
ISBN（印刷版）	9781538637111
DOI	https://doi.org/10.1109/EDTM.2018.8421488
出版ステータス	出版済み - 7月 26 2018
イベント	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, 日本継続期間: 3月 13 2018 → 3月 16 2018

出版物シリーズ

名前	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

その他

その他	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
国/地域	日本
City	Kobe
Period	3/13/18 → 3/16/18

!!!All Science Journal Classification (ASJC) codes

電子工学および電気工学
産業および生産工学
電子材料、光学材料、および磁性材料

文献へのアクセス

10.1109/EDTM.2018.8421488

他のファイルとリンク

引用スタイル

Takahashi, K., Ikenoue, H., Sakashita, M., Nakatsuka, O., Zaima, S., & Kurosawa, M. (2018). Low thermal budget fabrication of poly-Ge_1-xSn_x thin film thermoelectric generator. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp. 313-315). 記事 8421488 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421488

Low thermal budget fabrication of poly-Ge_1-xSn_x thin film thermoelectric generator. / Takahashi, Kouta; Ikenoue, Hiroshi; Sakashita, Mitsuo その他.
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 313-315 8421488 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

Takahashi, K, Ikenoue, H, Sakashita, M, Nakatsuka, O, Zaima, S & Kurosawa, M 2018, Low thermal budget fabrication of poly-Ge_1-xSn_x thin film thermoelectric generator. in 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings., 8421488, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 313-315, 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018, Kobe, 日本, 3/13/18. https://doi.org/10.1109/EDTM.2018.8421488

Takahashi K, Ikenoue H, Sakashita M, Nakatsuka O, Zaima S, Kurosawa M. Low thermal budget fabrication of poly-Ge_1-xSn_x thin film thermoelectric generator. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 313-315. 8421488. (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). doi: 10.1109/EDTM.2018.8421488

Takahashi, Kouta ; Ikenoue, Hiroshi ; Sakashita, Mitsuo その他. / Low thermal budget fabrication of poly-Ge_1-xSn_x thin film thermoelectric generator. 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 313-315 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

@inproceedings{f83c9af6d6204e619ae03036419cc244,

title = "Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator",

abstract = "We have investigated thermoelectric (TE) properties of poly-Ge1-xSnx layers prepared with pulsed laser annealing in water. Even for polycrystalline layers, relatively high power factors of 0.37 and 0.92 mWK-2m-1 were obtained for p- and n-type poly-Ge1-xSnx layers, respectively. The Ge1-xSnx-based TE generator has been firstly fabricated blow the process temperature of 300 °C.",

author = "Kouta Takahashi and Hiroshi Ikenoue and Mitsuo Sakashita and Osamu Nakatsuka and Shigeaki Zaima and Masashi Kurosawa",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 ; Conference date: 13-03-2018 Through 16-03-2018",

year = "2018",

month = jul,

day = "26",

doi = "10.1109/EDTM.2018.8421488",

language = "English",

isbn = "9781538637111",

series = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "313--315",

booktitle = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",

address = "United States",

}

TY - GEN

T1 - Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator

AU - Takahashi, Kouta

AU - Ikenoue, Hiroshi

AU - Sakashita, Mitsuo

AU - Nakatsuka, Osamu

AU - Zaima, Shigeaki

AU - Kurosawa, Masashi

PY - 2018/7/26

Y1 - 2018/7/26

N2 - We have investigated thermoelectric (TE) properties of poly-Ge1-xSnx layers prepared with pulsed laser annealing in water. Even for polycrystalline layers, relatively high power factors of 0.37 and 0.92 mWK-2m-1 were obtained for p- and n-type poly-Ge1-xSnx layers, respectively. The Ge1-xSnx-based TE generator has been firstly fabricated blow the process temperature of 300 °C.

AB - We have investigated thermoelectric (TE) properties of poly-Ge1-xSnx layers prepared with pulsed laser annealing in water. Even for polycrystalline layers, relatively high power factors of 0.37 and 0.92 mWK-2m-1 were obtained for p- and n-type poly-Ge1-xSnx layers, respectively. The Ge1-xSnx-based TE generator has been firstly fabricated blow the process temperature of 300 °C.

UR - https://www.scopus.com/pages/publications/85051560239

UR - https://www.scopus.com/pages/publications/85051560239#tab=citedBy

U2 - 10.1109/EDTM.2018.8421488

DO - 10.1109/EDTM.2018.8421488

M3 - Conference contribution

AN - SCOPUS:85051560239

SN - 9781538637111

T3 - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

SP - 313

EP - 315

BT - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018

Y2 - 13 March 2018 through 16 March 2018

ER -