Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator

Kouta Takahashi; Hiroshi Ikenoue; Mitsuo Sakashita; Osamu Nakatsuka; Shigeaki Zaima; Masashi Kurosawa

doi:10.1109/EDTM.2018.8421488

Low thermal budget fabrication of poly-Ge_1-xSn_x thin film thermoelectric generator

Kouta Takahashi, Hiroshi Ikenoue, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima, Masashi Kurosawa

ギガフォトンNext GLP共同研究部門

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

1 被引用数 (Scopus)

抄録

We have investigated thermoelectric (TE) properties of poly-Ge1-xSnx layers prepared with pulsed laser annealing in water. Even for polycrystalline layers, relatively high power factors of 0.37 and 0.92 mWK^-2m^-1 were obtained for p- and n-type poly-Ge1-xSnx layers, respectively. The Ge1-xSnx-based TE generator has been firstly fabricated blow the process temperature of 300 °C.

本文言語	英語
ホスト出版物のタイトル	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	313-315
ページ数	3
ISBN（印刷版）	9781538637111
DOI	https://doi.org/10.1109/EDTM.2018.8421488
出版ステータス	出版済み - 7月 26 2018
イベント	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, 日本継続期間: 3月 13 2018 → 3月 16 2018

出版物シリーズ

名前	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

その他

その他	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
国/地域	日本
City	Kobe
Period	3/13/18 → 3/16/18

!!!All Science Journal Classification (ASJC) codes

電子工学および電気工学
産業および生産工学
電子材料、光学材料、および磁性材料

文献へのアクセス

10.1109/EDTM.2018.8421488

他のファイルとリンク

引用スタイル

Takahashi, K., Ikenoue, H., Sakashita, M., Nakatsuka, O., Zaima, S., & Kurosawa, M. (2018). Low thermal budget fabrication of poly-Ge_1-xSn_x thin film thermoelectric generator. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp. 313-315). 記事 8421488 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421488

Low thermal budget fabrication of poly-Ge_1-xSn_x thin film thermoelectric generator. / Takahashi, Kouta; Ikenoue, Hiroshi; Sakashita, Mitsuo その他.
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 313-315 8421488 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

Takahashi, K, Ikenoue, H, Sakashita, M, Nakatsuka, O, Zaima, S & Kurosawa, M 2018, Low thermal budget fabrication of poly-Ge_1-xSn_x thin film thermoelectric generator. in 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings., 8421488, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 313-315, 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018, Kobe, 日本, 3/13/18. https://doi.org/10.1109/EDTM.2018.8421488

Takahashi K, Ikenoue H, Sakashita M, Nakatsuka O, Zaima S, Kurosawa M. Low thermal budget fabrication of poly-Ge_1-xSn_x thin film thermoelectric generator. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 313-315. 8421488. (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). doi: 10.1109/EDTM.2018.8421488

Takahashi, Kouta ; Ikenoue, Hiroshi ; Sakashita, Mitsuo その他. / Low thermal budget fabrication of poly-Ge_1-xSn_x thin film thermoelectric generator. 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 313-315 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

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abstract = "We have investigated thermoelectric (TE) properties of poly-Ge1-xSnx layers prepared with pulsed laser annealing in water. Even for polycrystalline layers, relatively high power factors of 0.37 and 0.92 mWK-2m-1 were obtained for p- and n-type poly-Ge1-xSnx layers, respectively. The Ge1-xSnx-based TE generator has been firstly fabricated blow the process temperature of 300 °C.",

author = "Kouta Takahashi and Hiroshi Ikenoue and Mitsuo Sakashita and Osamu Nakatsuka and Shigeaki Zaima and Masashi Kurosawa",

note = "Funding Information: We wish to thank Gigaphoton Inc. for providing the KrF excimer laser under collaborative work with the Dept. of Gigaphoton Next GLP at Kyushu Univ.. This work was partly supported by Grants-in-Aid for Scientific Research (S) (Grant No. 26220605) and oY ung Scientists (A) (Grant No. 17H04919) from the JSPS and PRESTO (Grant No. JPMJPR15R2) from the JST in Japan. Publisher Copyright: {\textcopyright} 2018 IEEE.; 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 ; Conference date: 13-03-2018 Through 16-03-2018",

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AU - Kurosawa, Masashi

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