Low-temperature LD direct bonding for highly functional optical MEMS

E. Higurashi; T. Itoh; T. Suga; Renshi Sawada

doi:10.1109/OMEMS.2005.1540149

Low-temperature LD direct bonding for highly functional optical MEMS

E. Higurashi, T. Itoh, T. Suga, Renshi Sawada

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

7 被引用数 (Scopus)

抄録

This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

本文言語	英語
ホスト出版物のタイトル	IEEE/LEOS Optical MEMS 2005: International Conference on Optical MEMS and Their Applications
ページ	201-202
ページ数	2
DOI	https://doi.org/10.1109/OMEMS.2005.1540149
出版ステータス	出版済み - 2005
イベント	IEEE/LEOS Optical MEMS 2005: International Conference on Optical MEMS and Their Applications - Oulu, フィンランド継続期間: 8月 1 2005 → 8月 4 2005

その他

その他	IEEE/LEOS Optical MEMS 2005: International Conference on Optical MEMS and Their Applications
国/地域	フィンランド
City	Oulu
Period	8/1/05 → 8/4/05

!!!All Science Journal Classification (ASJC) codes

工学（全般）

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10.1109/OMEMS.2005.1540149

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引用スタイル

Higurashi, E, Itoh, T, Suga, T & Sawada, R 2005, Low-temperature LD direct bonding for highly functional optical MEMS. in IEEE/LEOS Optical MEMS 2005: International Conference on Optical MEMS and Their Applications., 1540149, pp. 201-202, IEEE/LEOS Optical MEMS 2005: International Conference on Optical MEMS and Their Applications, Oulu, フィンランド, 8/1/05. https://doi.org/10.1109/OMEMS.2005.1540149

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title = "Low-temperature LD direct bonding for highly functional optical MEMS",

abstract = "This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.",

author = "E. Higurashi and T. Itoh and T. Suga and Renshi Sawada",

year = "2005",

doi = "10.1109/OMEMS.2005.1540149",

language = "English",

isbn = "0780392787",

pages = "201--202",

booktitle = "IEEE/LEOS Optical MEMS 2005: International Conference on Optical MEMS and Their Applications",

note = "IEEE/LEOS Optical MEMS 2005: International Conference on Optical MEMS and Their Applications ; Conference date: 01-08-2005 Through 04-08-2005",

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AU - Suga, T.

AU - Sawada, Renshi

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N2 - This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

AB - This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

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M3 - Conference contribution

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BT - IEEE/LEOS Optical MEMS 2005: International Conference on Optical MEMS and Their Applications

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ER -

Low-temperature LD direct bonding for highly functional optical MEMS

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!!!All Science Journal Classification (ASJC) codes

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