Low temperature growth of β-FeSi2 films on Si(111) by RF magnetron sputtering using a FeSi2 alloy target

T. Yoshitake; T. Hanada; K. Nagayama

doi:10.1023/A:1006722205010

Low temperature growth of β-FeSi₂ films on Si(111) by RF magnetron sputtering using a FeSi₂ alloy target

T. Yoshitake, T. Hanada, K. Nagayama

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

8 被引用数 (Scopus)

抄録

In this study, β-FeSi₂ phase was successfully grown at low temperature using an RF magnetron sputtering method. Although the film contained many defects, the possibility of improving them through annealing was shown.

本文言語	英語
ページ（範囲）	537-538
ページ数	2
ジャーナル	Journal of Materials Science Letters
巻	19
号	7
DOI	https://doi.org/10.1023/A:1006722205010
出版ステータス	出版済み - 2000

!!!All Science Journal Classification (ASJC) codes

材料科学（全般）

文献へのアクセス

10.1023/A:1006722205010

他のファイルとリンク

引用スタイル

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title = "Low temperature growth of β-FeSi2 films on Si(111) by RF magnetron sputtering using a FeSi2 alloy target",

abstract = "In this study, β-FeSi2 phase was successfully grown at low temperature using an RF magnetron sputtering method. Although the film contained many defects, the possibility of improving them through annealing was shown.",

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year = "2000",

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AU - Yoshitake, T.

AU - Hanada, T.

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PY - 2000

Y1 - 2000

N2 - In this study, β-FeSi2 phase was successfully grown at low temperature using an RF magnetron sputtering method. Although the film contained many defects, the possibility of improving them through annealing was shown.

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JF - Journal of Materials Science Letters

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