Low-Temperature Formation of Poly-Si_<1-x>Ge_x (x:0-1) on SiO_2 by Au-Mediated Lateral Crystallization

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

本文言語	英語
ページ（範囲）	2405-2408
ページ数	4
ジャーナル	Japanese Journal of Applied Physics, Part 2: Letters
巻	44
号	4
出版ステータス	出版済み - 4月 30 2005

文献へのアクセス

@article{38029e457a5548bd9ceb18100e14becb,

title = "Low-Temperature Formation of Poly-Si\_<1-x>Ge\_x (x:0-1) on SiO\_2 by Au-Mediated Lateral Crystallization",

author = "Hiroshi Kanno and Tomohisa Aoki and Atsushi Kenjo and Taizoh Sadoh and Masanobu Miyao",

year = "2005",

month = apr,

day = "30",

language = "English",

volume = "44",

pages = "2405--2408",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "IOP Publishing Ltd.",

number = "4",

}

TY - JOUR

T1 - Low-Temperature Formation of Poly-Si_<1-x>Ge_x (x:0-1) on SiO_2 by Au-Mediated Lateral Crystallization

AU - Kanno, Hiroshi

AU - Aoki, Tomohisa

AU - Kenjo, Atsushi

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2005/4/30

Y1 - 2005/4/30

M3 - Article

SN - 0021-4922

VL - 44

SP - 2405

EP - 2408

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 4

ER -