TY - GEN
T1 - Low-temperature bonding of laser diode chips on Si substrates with oxygen and hydrogen atmospheric-pressure plasma activation
AU - Takigawa, Ryo
AU - Higurashi, Eiji
AU - Suga, Tadatomo
AU - Sawada, Renshi
PY - 2009
Y1 - 2009
N2 - Surface activated bonding (SAB) method with atmospheric-pressure plasma treatment is an effective approach to develop low cost, low damage, and low temperature bonding technology. In this research, not only conventional low-pressure plasma treatment (Ar RF plasma) but also atmospheric-pressure plasma treatment (Ar+O2, Ar+H2) was investigated for low-temperature Au-Au surface-activated bonding (150°C). In the case of Au thin film to Au thin film bonding, enough bonding strength was not obtained with Ar+O2 atmospheric-pressure plasma treatment due to Au 2O3 formed on Au surface. However, by using Au microbump (diameter at the top: 5 μm, height: 2 μm, and pitch: 10 μm), strong bonding strength was obtained with all these plasmas. Semiconductor laser diodes chips were successfully bonded to Si substrates wiht Au microbumps at low temperature (150°C) in ambient air using Ar+H2 atmospheric-pressure plasma treatment.
AB - Surface activated bonding (SAB) method with atmospheric-pressure plasma treatment is an effective approach to develop low cost, low damage, and low temperature bonding technology. In this research, not only conventional low-pressure plasma treatment (Ar RF plasma) but also atmospheric-pressure plasma treatment (Ar+O2, Ar+H2) was investigated for low-temperature Au-Au surface-activated bonding (150°C). In the case of Au thin film to Au thin film bonding, enough bonding strength was not obtained with Ar+O2 atmospheric-pressure plasma treatment due to Au 2O3 formed on Au surface. However, by using Au microbump (diameter at the top: 5 μm, height: 2 μm, and pitch: 10 μm), strong bonding strength was obtained with all these plasmas. Semiconductor laser diodes chips were successfully bonded to Si substrates wiht Au microbumps at low temperature (150°C) in ambient air using Ar+H2 atmospheric-pressure plasma treatment.
UR - https://www.scopus.com/pages/publications/70450073484
UR - https://www.scopus.com/pages/publications/70450073484#tab=citedBy
U2 - 10.1109/ICEPT.2009.5270708
DO - 10.1109/ICEPT.2009.5270708
M3 - Conference contribution
AN - SCOPUS:70450073484
SN - 9781424446599
T3 - 2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009
SP - 475
EP - 477
BT - 2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009
T2 - 2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009
Y2 - 10 August 2009 through 13 August 2009
ER -