TY - GEN
T1 - KrF excimer laser annealing of a-InGaZnO thin-film transistors with solution processed hybrid passivation layers
AU - Bermundo, Juan Paolo
AU - Ishikawa, Yasuaki
AU - Fujii, Mami N.
AU - Nonaka, Toshiaki
AU - Ikenoue, Hiroshi
AU - Uraoka, Yukiharu
N1 - Publisher Copyright:
© 2015 Society for Information Display.
PY - 2015
Y1 - 2015
N2 - We show how KrF excimer laser annealing (ELA) can be used as a low temperature annealing process to improve the properties of passivated amorphous InGaZnO thin-film transistors. We analyzed the effect of KrF ELA on the electrical properties, physical structure, chemical bonding and composition of a-InGaZnO.
AB - We show how KrF excimer laser annealing (ELA) can be used as a low temperature annealing process to improve the properties of passivated amorphous InGaZnO thin-film transistors. We analyzed the effect of KrF ELA on the electrical properties, physical structure, chemical bonding and composition of a-InGaZnO.
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UR - http://www.scopus.com/inward/citedby.url?scp=85056395207&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:85056395207
T3 - Proceedings of the International Display Workshops
SP - 53
EP - 54
BT - 22nd International Display Workshops, IDW 2015
PB - International Display Workshops
T2 - 22nd International Display Workshops, IDW 2015
Y2 - 9 December 2015 through 11 December 2015
ER -
