Ion-irradiation-enhanced dissolution of epitaxial fluoride films: A new class of inorganic single-crystal ion resist

Tanemasa Asano; Hiroshi Ishiwara; Seijiro Furukawa

doi:10.1016/0168-583X(89)90887-2

Ion-irradiation-enhanced dissolution of epitaxial fluoride films: A new class of inorganic single-crystal ion resist

Tanemasa Asano
, Hiroshi Ishiwara
, Seijiro Furukawa

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

5 被引用数 (Scopus)

抄録

Effects of ion implantation on epitaxial CaF₂ films grown on Si(100) substrates were investigated from the viewpoint of their application as an inorganic ion resists. It has been found that the etching rate of the CaF₂ films in HCl acid is enhanced by a factor of about 4 by oxygen implantation with a dose of 1 × 10¹⁶ cm^-2. It has also been found that optical properties of CaF₂ films change, even in hydrogen-implanted samples with a dose of 2 × 10¹⁶ cm^-2, after exposing the samples to an oxygen plasma.

本文言語	英語
ページ（範囲）	739-741
ページ数	3
ジャーナル	Nuclear Inst. and Methods in Physics Research, B
巻	39
号	1-4
DOI	https://doi.org/10.1016/0168-583X(89)90887-2
出版ステータス	出版済み - 3月 2 1989
外部発表	はい

!!!All Science Journal Classification (ASJC) codes

核物理学および高エネルギー物理学
器械工学

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10.1016/0168-583X(89)90887-2

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title = "Ion-irradiation-enhanced dissolution of epitaxial fluoride films: A new class of inorganic single-crystal ion resist",

abstract = "Effects of ion implantation on epitaxial CaF2 films grown on Si(100) substrates were investigated from the viewpoint of their application as an inorganic ion resists. It has been found that the etching rate of the CaF2 films in HCl acid is enhanced by a factor of about 4 by oxygen implantation with a dose of 1 × 1016 cm-2. It has also been found that optical properties of CaF2 films change, even in hydrogen-implanted samples with a dose of 2 × 1016 cm-2, after exposing the samples to an oxygen plasma.",

author = "Tanemasa Asano and Hiroshi Ishiwara and Seijiro Furukawa",

year = "1989",

month = mar,

day = "2",

doi = "10.1016/0168-583X(89)90887-2",

language = "English",

volume = "39",

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journal = "Nuclear Inst. and Methods in Physics Research, B",

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T1 - Ion-irradiation-enhanced dissolution of epitaxial fluoride films

T2 - A new class of inorganic single-crystal ion resist

AU - Asano, Tanemasa

AU - Ishiwara, Hiroshi

AU - Furukawa, Seijiro

PY - 1989/3/2

Y1 - 1989/3/2

N2 - Effects of ion implantation on epitaxial CaF2 films grown on Si(100) substrates were investigated from the viewpoint of their application as an inorganic ion resists. It has been found that the etching rate of the CaF2 films in HCl acid is enhanced by a factor of about 4 by oxygen implantation with a dose of 1 × 1016 cm-2. It has also been found that optical properties of CaF2 films change, even in hydrogen-implanted samples with a dose of 2 × 1016 cm-2, after exposing the samples to an oxygen plasma.

AB - Effects of ion implantation on epitaxial CaF2 films grown on Si(100) substrates were investigated from the viewpoint of their application as an inorganic ion resists. It has been found that the etching rate of the CaF2 films in HCl acid is enhanced by a factor of about 4 by oxygen implantation with a dose of 1 × 1016 cm-2. It has also been found that optical properties of CaF2 films change, even in hydrogen-implanted samples with a dose of 2 × 1016 cm-2, after exposing the samples to an oxygen plasma.

UR - https://www.scopus.com/pages/publications/0024621681

UR - https://www.scopus.com/pages/publications/0024621681#tab=citedBy

U2 - 10.1016/0168-583X(89)90887-2

DO - 10.1016/0168-583X(89)90887-2

M3 - Article

AN - SCOPUS:0024621681

SN - 0168-583X

VL - 39

SP - 739

EP - 741

JO - Nuclear Inst. and Methods in Physics Research, B

JF - Nuclear Inst. and Methods in Physics Research, B

IS - 1-4

ER -

Ion-irradiation-enhanced dissolution of epitaxial fluoride films: A new class of inorganic single-crystal ion resist

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!!!All Science Journal Classification (ASJC) codes

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