TY - GEN
T1 - Ion-beam enhanced stress-relaxation of SiGe on SiO2
AU - Tanaka, M.
AU - Sadoh, T.
AU - Ninomiya, M.
AU - Nakamae, M.
AU - Enokida, T.
AU - Miyao, M.
PY - 2005
Y1 - 2005
N2 - The Ge condensation by oxidation of SiGe/Si-on-insulator (SOI) structures enabled highly stress relaxed SGOI. However, the relaxation rate obtained in the SiGe layers on insulator (SGOI) abruptly decreased with decreasing SiGe thickness below 50 nm. In order to enhance the relaxation rate in ultra-thin SGOI, the technique combined with H+ irradiation with medium dose (5×1015 cm-2) and post-annealing (1200 °C) has been developed. It was demonstrated that highly relaxed (70 %) ultra-thin SGOI with low defect density (<106 cm-2) has been realized by this technique.
AB - The Ge condensation by oxidation of SiGe/Si-on-insulator (SOI) structures enabled highly stress relaxed SGOI. However, the relaxation rate obtained in the SiGe layers on insulator (SGOI) abruptly decreased with decreasing SiGe thickness below 50 nm. In order to enhance the relaxation rate in ultra-thin SGOI, the technique combined with H+ irradiation with medium dose (5×1015 cm-2) and post-annealing (1200 °C) has been developed. It was demonstrated that highly relaxed (70 %) ultra-thin SGOI with low defect density (<106 cm-2) has been realized by this technique.
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U2 - 10.1557/proc-0908-oo05-21
DO - 10.1557/proc-0908-oo05-21
M3 - Conference contribution
AN - SCOPUS:34249943512
SN - 1558998632
SN - 9781558998636
T3 - Materials Research Society Symposium Proceedings
SP - 50
EP - 54
BT - Growth, Modification and Analysis by Ion Beams at the Nanoscale
PB - Materials Research Society
T2 - 2005 MRS Fall Meeting
Y2 - 28 November 2005 through 2 December 2005
ER -