TY - JOUR
T1 - Investigation of clean ferroelectric surface in Ultra High Vacuum (UHV)
T2 - 9th Russian-CIS-Baltic-Japanese Symposium on Ferroelectricity, RCBJSF-9
AU - Watanabe, Yukio
AU - Kaku, Shigeru
AU - Matsumoto, Daisuke
AU - Urakami, Yosuke
AU - Cheong, S. W.
N1 - Funding Information:
The existence of a PS-induced surface carrier layer and its sensitivity to the surface contamination as shown by the exposure experiments demonstrate that PS reaches the top surface, which has an important implication for the nanometer-scale ferroelectrics. This means also an intriguing special surface layer where PS and free carriers coexist and interact with each other. The existence of PS in a carrier layer implies that the long range electrostatic force proposed by Slater [25] would not be the dominant origin of the ferroelectricity. We acknowledge Grants-in-aid for Scientific Research from JSPS No. 19340084.
Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2009
Y1 - 2009
N2 - We discuss the controversies related with an intrinsic screening effect of the ferroelectric surface and report experiments of electron (e-)/hole (h+) layer on the clean surface of insulating pure BaTiO3 single crystals in ultra high vacuum, which is a follow-up of the first report on the intrinsic surface carrier layer on ferroelectric [Y. Watanabe et al., Phys. Rev. Lett. 86, 332 (2001)]. The experiments verify that both accumulation and inversion occur and the surface carrier layer is intrinsic, i.e., mainly due to spontaneous polarization PS not to impurities or defects. We show also that the surface carrier layer is consistent with the 180° domains, the theory for the polarization (D-E) curves of ferroelectric FET [S. L. Miller and P. J. McWhorter, J.Appl. Phys. 72, 5999 (1992)], the invisibility of the carrier layer in the dynamic response of ferroelectric. Especially, the electrostatic and the piezoelectric-response images by UHV-AFM show directly an intrinsic screening effect in 180° domains.
AB - We discuss the controversies related with an intrinsic screening effect of the ferroelectric surface and report experiments of electron (e-)/hole (h+) layer on the clean surface of insulating pure BaTiO3 single crystals in ultra high vacuum, which is a follow-up of the first report on the intrinsic surface carrier layer on ferroelectric [Y. Watanabe et al., Phys. Rev. Lett. 86, 332 (2001)]. The experiments verify that both accumulation and inversion occur and the surface carrier layer is intrinsic, i.e., mainly due to spontaneous polarization PS not to impurities or defects. We show also that the surface carrier layer is consistent with the 180° domains, the theory for the polarization (D-E) curves of ferroelectric FET [S. L. Miller and P. J. McWhorter, J.Appl. Phys. 72, 5999 (1992)], the invisibility of the carrier layer in the dynamic response of ferroelectric. Especially, the electrostatic and the piezoelectric-response images by UHV-AFM show directly an intrinsic screening effect in 180° domains.
UR - https://www.scopus.com/pages/publications/74549196763
UR - https://www.scopus.com/pages/publications/74549196763#tab=citedBy
U2 - 10.1080/00150190902852083
DO - 10.1080/00150190902852083
M3 - Conference article
AN - SCOPUS:74549196763
SN - 0015-0193
VL - 379
SP - 157
EP - 167
JO - Ferroelectrics
JF - Ferroelectrics
IS - 1 PART 2
Y2 - 15 June 2008 through 19 June 2008
ER -