Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex(x: 0–1) on Insulating Substrate

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

寄稿の翻訳タイトル	2009-03-23
本文言語	未定義/不明
ページ（範囲）	03B002-03B002
ジャーナル	Japanese Journal of Applied Physics, Part 2: Letters
巻	48
号	3
出版ステータス	出版済み - 3月 23 2009

文献へのアクセス

@article{60da8111e8de4138a71fb2515140ee20,

title = "Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex(x: 0–1) on Insulating Substrate",

author = "Masashi Kurosawa and Yoshitaka Tsumura and Taizoh Sadoh and Masanobu Miyao",

year = "2009",

month = mar,

day = "23",

language = "未定義/不明",

volume = "48",

pages = "03B002--03B002",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "IOP Publishing Ltd.",

number = "3",

}

TY - JOUR

T1 - Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex(x

T2 - 0–1) on Insulating Substrate

AU - Kurosawa, Masashi

AU - Tsumura, Yoshitaka

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2009/3/23

Y1 - 2009/3/23

M3 - 学術誌

SN - 0021-4922

VL - 48

SP - 03B002-03B002

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 3

ER -