Interface-Modulated Solid-Phase Crystallization of Sn-Doped Ge Ultrathin-Films for Advanced TFT

Taizoh Sadoh; Takaya Nagano; Taishiro Koga; Kenta Moto; Keisuke Yamamoto

Interface-Modulated Solid-Phase Crystallization of Sn-Doped Ge Ultrathin-Films for Advanced TFT

Taizoh Sadoh
, Takaya Nagano
, Taishiro Koga
, Kenta Moto
, Keisuke Yamamoto

研究成果: ジャーナルへの寄稿 › 会議記事 › 査読

抄録

High-speed fully-depleted thin-film transistors (TFTs) are required for next-generation electronics, such as three-dimensional large-scale integrated circuits and advanced system-in-displays. For this purpose, a novel growth technique, i.e., interface-modulated solid-phase crystallization, of Sn-doped Ge has been developed. This achieves high carrier mobility (~100 cm²/Vs) of ultrathin films (20 nm) on insulators.

本文言語	英語
ページ（範囲）	165-167
ページ数	3
ジャーナル	Proceedings of the International Display Workshops
巻	29
出版ステータス	出版済み - 2022
イベント	29th International Display Workshops, IDW 2022 - Fukuoka, 日本継続期間: 12月 14 2022 → 12月 16 2022

!!!All Science Journal Classification (ASJC) codes

コンピュータビジョンおよびパターン認識
人間とコンピュータの相互作用
電子工学および電気工学
電子材料、光学材料、および磁性材料

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引用スタイル

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title = "Interface-Modulated Solid-Phase Crystallization of Sn-Doped Ge Ultrathin-Films for Advanced TFT",

abstract = "High-speed fully-depleted thin-film transistors (TFTs) are required for next-generation electronics, such as three-dimensional large-scale integrated circuits and advanced system-in-displays. For this purpose, a novel growth technique, i.e., interface-modulated solid-phase crystallization, of Sn-doped Ge has been developed. This achieves high carrier mobility (\textasciitilde{}100 cm2/Vs) of ultrathin films (20 nm) on insulators.",

author = "Taizoh Sadoh and Takaya Nagano and Taishiro Koga and Kenta Moto and Keisuke Yamamoto",

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T1 - Interface-Modulated Solid-Phase Crystallization of Sn-Doped Ge Ultrathin-Films for Advanced TFT

AU - Sadoh, Taizoh

AU - Nagano, Takaya

AU - Koga, Taishiro

AU - Moto, Kenta

AU - Yamamoto, Keisuke

PY - 2022

Y1 - 2022

N2 - High-speed fully-depleted thin-film transistors (TFTs) are required for next-generation electronics, such as three-dimensional large-scale integrated circuits and advanced system-in-displays. For this purpose, a novel growth technique, i.e., interface-modulated solid-phase crystallization, of Sn-doped Ge has been developed. This achieves high carrier mobility (~100 cm2/Vs) of ultrathin films (20 nm) on insulators.

AB - High-speed fully-depleted thin-film transistors (TFTs) are required for next-generation electronics, such as three-dimensional large-scale integrated circuits and advanced system-in-displays. For this purpose, a novel growth technique, i.e., interface-modulated solid-phase crystallization, of Sn-doped Ge has been developed. This achieves high carrier mobility (~100 cm2/Vs) of ultrathin films (20 nm) on insulators.

UR - https://www.scopus.com/pages/publications/85175258209

UR - https://www.scopus.com/pages/publications/85175258209#tab=citedBy

M3 - Conference article

AN - SCOPUS:85175258209

SN - 1883-2490

VL - 29

SP - 165

EP - 167

JO - Proceedings of the International Display Workshops

JF - Proceedings of the International Display Workshops

T2 - 29th International Display Workshops, IDW 2022

Y2 - 14 December 2022 through 16 December 2022

ER -

Interface-Modulated Solid-Phase Crystallization of Sn-Doped Ge Ultrathin-Films for Advanced TFT

抄録

!!!All Science Journal Classification (ASJC) codes

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