TY - JOUR
T1 - Interface-Modulated Solid-Phase Crystallization of Sn-Doped Ge Ultrathin-Films for Advanced TFT
AU - Sadoh, Taizoh
AU - Nagano, Takaya
AU - Koga, Taishiro
AU - Moto, Kenta
AU - Yamamoto, Keisuke
N1 - Publisher Copyright:
© 2022 ITE and SID.
PY - 2022
Y1 - 2022
N2 - High-speed fully-depleted thin-film transistors (TFTs) are required for next-generation electronics, such as three-dimensional large-scale integrated circuits and advanced system-in-displays. For this purpose, a novel growth technique, i.e., interface-modulated solid-phase crystallization, of Sn-doped Ge has been developed. This achieves high carrier mobility (~100 cm2/Vs) of ultrathin films (20 nm) on insulators.
AB - High-speed fully-depleted thin-film transistors (TFTs) are required for next-generation electronics, such as three-dimensional large-scale integrated circuits and advanced system-in-displays. For this purpose, a novel growth technique, i.e., interface-modulated solid-phase crystallization, of Sn-doped Ge has been developed. This achieves high carrier mobility (~100 cm2/Vs) of ultrathin films (20 nm) on insulators.
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M3 - Conference article
AN - SCOPUS:85175258209
SN - 1883-2490
VL - 29
SP - 165
EP - 167
JO - Proceedings of the International Display Workshops
JF - Proceedings of the International Display Workshops
T2 - 29th International Display Workshops, IDW 2022
Y2 - 14 December 2022 through 16 December 2022
ER -