TY - JOUR
T1 - Injection of current densities over kA/cm2 in organic thin films and investigation of charge-carrier transport mechanisms in current density region between nA/cm2 and kA/cm2
AU - Matsushima, Toshinori
AU - Adachi, Chihaya
PY - 2006
Y1 - 2006
N2 - We investigate current density-voltage (J-V) characteristics of copper phthalocyanine thin-film devices, with active areas ranging from S = 1,000,000 to 7.9 μm2, and analyze their charge-carrier transport mechanisms under current densities between nA/cm2 and kA/cm2. We demonstrate injection of 128 kA/cm2 in the smallest device having S = 7.9 μ2. Furthermore, we find that J-V characteristics are divided into three regions between nA/cm2 and kA/cm2: ohm current, shallow-trap space-charge-limited current (SCLC), and trap-free SCLC. In a shallow-trap SCLC region, we observe a large shift in J-V characteristics depending upon the active areas. From analyses of carrier traps with a thermally stimulated current (TSC) measurement, we see that TSC signal intensities of these films decrease as the active area is reduced. Hence, we conclude that a large shift in J-V characteristics is attributable to the change of carrier trap concentrations in these films.
AB - We investigate current density-voltage (J-V) characteristics of copper phthalocyanine thin-film devices, with active areas ranging from S = 1,000,000 to 7.9 μm2, and analyze their charge-carrier transport mechanisms under current densities between nA/cm2 and kA/cm2. We demonstrate injection of 128 kA/cm2 in the smallest device having S = 7.9 μ2. Furthermore, we find that J-V characteristics are divided into three regions between nA/cm2 and kA/cm2: ohm current, shallow-trap space-charge-limited current (SCLC), and trap-free SCLC. In a shallow-trap SCLC region, we observe a large shift in J-V characteristics depending upon the active areas. From analyses of carrier traps with a thermally stimulated current (TSC) measurement, we see that TSC signal intensities of these films decrease as the active area is reduced. Hence, we conclude that a large shift in J-V characteristics is attributable to the change of carrier trap concentrations in these films.
UR - http://www.scopus.com/inward/record.url?scp=33846977751&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33846977751&partnerID=8YFLogxK
U2 - 10.1117/12.682122
DO - 10.1117/12.682122
M3 - Conference article
AN - SCOPUS:33846977751
SN - 0277-786X
VL - 6333
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
M1 - 63331O
T2 - Organic Ligh Emitting Materials and Devices X
Y2 - 13 August 2006 through 16 August 2006
ER -