Initial stages of growth of thin films of III-V nitrides and silicon carbide polytypes by molecular beam epitaxy

Robert F. Davis, K. S. Ailey, R. S. Kern, D. J. Kester, Z. Sitar, L. Smith, S. Tanaka, C. Wang

研究成果: ジャーナルへの寄稿会議記事査読

2 被引用数 (Scopus)

抄録

The morphology and interface chemistry occurring during the initial deposition of BN, AlN and GaN films via metal evaporation and N2 decomposition under UHV conditions have been determined. FTIR spectroscopy and TEM revealed the consecutive deposition of an initial 20angstrom layer of a-BN, 20-60angstrom of oriented h-BN, and a final layer of polycrystalline c-BN. This sequence is attributed primarily to increasing intrinsic compressive stress in the films. XPS analysis revealed the growth of GaN on sapphire to occur via the Stranski-Krastanov mode; growth on SiC showed characteristics of three-dimensional growth. AlN grew layer-by-layer on both substrates. Vicinal 6H-SiC(0001) substrate surfaces contain closely spaced, single bilayer steps. During deposition of Si and C at 1050°C, 6H layers initially form and step bunching occurs. The latter phenomenon results in more widely spaced steps, the nucleation of 3C-SiC both on the new terraces and at the larger steps and formation of double position boundaries. The C/Si ratio in the gaseous reactants also affects the occurrence of these three phenomena.

本文言語英語
ページ(範囲)351-362
ページ数12
ジャーナルMaterials Research Society Symposium - Proceedings
339
DOI
出版ステータス出版済み - 1994
外部発表はい
イベントProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
継続期間: 4月 4 19944月 8 1994

!!!All Science Journal Classification (ASJC) codes

  • 材料科学一般
  • 凝縮系物理学
  • 材料力学
  • 機械工学

フィンガープリント

「Initial stages of growth of thin films of III-V nitrides and silicon carbide polytypes by molecular beam epitaxy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル