Initial stage of GaN nucleation on √3 × √3 R 30°-Ga reconstructed 4H-SiC(0 0 0 1)Si by molecular-beam epitaxy

K. Jeganathan, M. Shimuzu, H. Okumura, F. Hirose, S. Nishizawa

研究成果: ジャーナルへの寄稿学術誌査読

15 被引用数 (Scopus)

抄録

Gallium nitride (GaN) initial nucleation kinetics by the influence of SiC(0 0 0 1)Si surface structure has been investigated. The Ga induced √3×√3R30° and 3×3 surface reconstructions are found to be more efficacious for GaN growth. During the initial stage of GaN/4H-SiC(0 0 0 1)Si growth by molecular-beam epitaxy, coherent polygon islands grow wide (∼40 nm) along the lateral directions. These coherent islands develop 2D growth through early coalescence as evidenced by the in situ reflection high-energy electron diffraction observation. The control of Ga-adatom migration and the adsorption of 1/3 and 1 monolayer (ML) of Ga-adatom govern the surface morphology of the GaN layers. The bulk surfaces of (1 × 1) and (2 × 1) introduces incoherent nuclei, resulting in a delay of GaN coalescence, exhibits rough growth front and poor surface morphology.

本文言語英語
ページ(範囲)L197-L202
ジャーナルSurface Science
527
1-3
DOI
出版ステータス出版済み - 3月 10 2003
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学

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