Influence of wafer edge profile on STI-CMP process performance (examination based on surface pressure of wafer calculated by FEM analysis)

Akira Fukuda, Tetsuo Fukuda, Hirokuni Hiyama, Manabu Tsujimura, Toshiro Doi, Syuhei Kurokawa, Osamu Ohnishi

研究成果: ジャーナルへの寄稿学術誌査読

1 被引用数 (Scopus)

抄録

Influence of wafer edge profile on performance of Shallow Trench Isolation Chemical Mechanical Polishing (STI-CMP) process for semiconductor manufacturing was investigated. Finite Element Method was used to calculate the contact pressure on the wafer surface, and the removal rate was estimated based on the calculated contact pressure. As a result, shortening the edge width was confirmed to achieve flatter distribution of the contact pressure near the wafer edge. And wafer edge profile controlling is proposed as an effective approach to satisfy the requirement of the edge exclusion. Suitable Roll-Off Amount (ROA) and edge width are also forecasted for STI-CMP process in the next generation semiconductor manufacturing. To meet the specification for the generation of hp=35 nm with 1.5 mm edge exclusion, the edge width would be below 300 μm and ROA would be bellow 100 nm.

本文言語英語
ページ(範囲)1610-1616
ページ数7
ジャーナルNihon Kikai Gakkai Ronbunshu, C Hen/Transactions of the Japan Society of Mechanical Engineers, Part C
76
766
DOI
出版ステータス出版済み - 6月 2010

!!!All Science Journal Classification (ASJC) codes

  • 材料力学
  • 機械工学
  • 産業および生産工学

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