Influence of defects on the order-disorder phase transition of a Si(001) surface

Yoshimichi Nakamura, Hiroshi Kawai, Masatoshi Nakayama

研究成果: ジャーナルへの寄稿学術誌査読

37 被引用数 (Scopus)

抄録

We study the influence of surface defects on the order-disorder phase transition of a Si(001) surface using Monte Carlo (MC) simulations based on the asymmetric-dimer model. The transition becomes broad in the system with a low density of the type-C defect. The temperature dependence of the long-range-order parameter (LOP), local-order parameter, and the intensity of the low-energy electron diffraction (LEED) peak is investigated. In order to analyze the local ordering from the scanning-tunneling-microscopy (STM) image quantitatively, the fraction of the site of the asymmetric image, called 'mesoscopic ordering index' (MOI), is introduced. The critical temperatures, defined as the middle point of the transition region of the LOP, the MOI, and the LEED intensity, are almost the same. The experimental temperature dependence of the LEED peak is explained by a combined effect of the defects and the coherence length. The present study offers an answer to the question what actually corresponds to the transitions observed in LEED and STM experiments.

本文言語英語
ページ(範囲)10549-10560
ページ数12
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
55
16
DOI
出版ステータス出版済み - 1997

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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