In situ x-ray topography of silicon carbide during crystal growth by sublimation method

H. Yamaguchi, S. Nishizawa, T. Kato, N. Oyanagi, W. Bahng, S. Yoshida, K. Arai, Y. Machitani, T. Kikuchi

研究成果: ジャーナルへの寄稿学術誌査読

12 被引用数 (Scopus)


We have developed an instrument for real-time observation of silicon carbide (SiC) crystal during the sublimation growth process by x-ray topography. It is constructed by combining an x-ray goniometer and a crystal-growth chamber. The vertical goniometer consists of three circles, an α circle for the x-ray source, a β circle for the detector, and a φ circle for the azimuthal rotation of the sample. The growing crystal boule is set at the center of the goniometer glued on a crucible lid. Transmission topographs are taken using an asymmetric (1011) reflection with the scattering angle 2 θB - β - α from the (0001)-oriented boule. A rotating-anode 18 kW generator with a molybdenum target is employed as the x-ray source. Topographs are observed by a direct imaging system using a charge-coupled device camera. Incident and scattered x-ray beams pass through beryllium windows mounted on the bottom and top flanges of the crystal-growth chamber, respectively. The crucibles are also designed for in situ measurements so that the x-ray beam path is separated from the source materials. The in situ topographs demonstrated the movement of micropipes and other defects during the crystal growth.

ジャーナルReview of Scientific Instruments
出版ステータス出版済み - 2000

!!!All Science Journal Classification (ASJC) codes

  • 器械工学


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