In-situ infrared reflective absorption spectroscopy characterization of SiN films deposited using sputtering-type ECR microwave plasma

Y. C. Liu, K. Furukawa, D. W. Gao, H. Nakashima, K. Uchino, K. Muraoka

研究成果: ジャーナルへの寄稿学術誌査読

16 被引用数 (Scopus)

抄録

High quality amorphous silicon nitride films have been deposited, without substrate heating, using a sputtering-type electron cyclotron resonance (ECR) microwave plasma. The compositional and structural characterizations have been made by means of a Fourier transform infrared (FT-IR) spectrometer and an ellipsometer. The correlation between the microstructure of a-Si x N y films and nitrogen gas fraction relative to argon (N2/Ar) is discussed. In-situ Fourier transform infrared reflection absorption spectroscopy (ISFT-IRRAS) has been used to study the properties of a-Si x N y /Si interface. The results from ISFT-IRRAS monitoring indicate that the broadening of a Si-N stretching vibration mode, induced by interface stress, decreases with increased film thickness.

本文言語英語
ページ(範囲)233-236
ページ数4
ジャーナルApplied Surface Science
121-122
DOI
出版ステータス出版済み - 11月 1997

!!!All Science Journal Classification (ASJC) codes

  • 化学一般
  • 凝縮系物理学
  • 物理学および天文学一般
  • 表面および界面
  • 表面、皮膜および薄膜

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