In-field characterization of FeTe0.8S0.2 epitaxial thin films with enhanced superconducting properties

Paolo Mele; Kaname Matsumoto; Yasunori Haruyama; Masashi Mukaida; Yutaka Yoshida; Yusuke Ichino; Takanobu Kiss; Ataru Ichinose

doi:10.1088/0953-2048/23/5/052001

In-field characterization of FeTe_0.8S_0.2 epitaxial thin films with enhanced superconducting properties

Paolo Mele
, Kaname Matsumoto
, Yasunori Haruyama
, Masashi Mukaida
, Yutaka Yoshida
, Yusuke Ichino
, Takanobu Kiss
, Ataru Ichinose

計測制御工学

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

29 被引用数 (Scopus)

抄録

Epitaxial Fe-Te-S thin films (thickness range 100-200nm) were deposited by pulsed laser deposition at 400 °C on SrTiO₃(100) and MgO(100) single-crystal substrates. The films reached the zero-resistance condition: T_c⁰ = 3.54K for on SrTiO₃ and 5.37K for on MgO, and presented a large upper critical field: T for on SrTiO₃ and 74.2T for on MgO, using 90% of the normal state resistance and the Werthamer-Helfand-Hohenberg model. The coherence length ξ₀ is very short: 2.30nm for on SrTiO₃ and 2.10nm for on MgO. The film grown on MgO showed T; then the isotropic parameter γ is 1.09. The best J _c observed is 10⁴Acm^-2 (at 2K, self-field) for the sample deposited on MgO.

本文言語	英語
論文番号	052001
ジャーナル	Superconductor Science and Technology
巻	23
号	5
DOI	https://doi.org/10.1088/0953-2048/23/5/052001
出版ステータス	出版済み - 2010

!!!All Science Journal Classification (ASJC) codes

セラミックおよび複合材料
凝縮系物理学
金属および合金
電子工学および電気工学
材料化学

文献へのアクセス

10.1088/0953-2048/23/5/052001

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引用スタイル

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title = "In-field characterization of FeTe0.8S0.2 epitaxial thin films with enhanced superconducting properties",

abstract = "Epitaxial Fe-Te-S thin films (thickness range 100-200nm) were deposited by pulsed laser deposition at 400 °C on SrTiO3(100) and MgO(100) single-crystal substrates. The films reached the zero-resistance condition: Tc0 = 3.54K for on SrTiO3 and 5.37K for on MgO, and presented a large upper critical field: T for on SrTiO3 and 74.2T for on MgO, using 90\% of the normal state resistance and the Werthamer-Helfand-Hohenberg model. The coherence length ξ0 is very short: 2.30nm for on SrTiO3 and 2.10nm for on MgO. The film grown on MgO showed T; then the isotropic parameter γ is 1.09. The best J c observed is 104Acm-2 (at 2K, self-field) for the sample deposited on MgO.",

author = "Paolo Mele and Kaname Matsumoto and Yasunori Haruyama and Masashi Mukaida and Yutaka Yoshida and Yusuke Ichino and Takanobu Kiss and Ataru Ichinose",

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T1 - In-field characterization of FeTe0.8S0.2 epitaxial thin films with enhanced superconducting properties

AU - Mele, Paolo

AU - Matsumoto, Kaname

AU - Haruyama, Yasunori

AU - Mukaida, Masashi

AU - Yoshida, Yutaka

AU - Ichino, Yusuke

AU - Kiss, Takanobu

AU - Ichinose, Ataru

PY - 2010

Y1 - 2010

N2 - Epitaxial Fe-Te-S thin films (thickness range 100-200nm) were deposited by pulsed laser deposition at 400 °C on SrTiO3(100) and MgO(100) single-crystal substrates. The films reached the zero-resistance condition: Tc0 = 3.54K for on SrTiO3 and 5.37K for on MgO, and presented a large upper critical field: T for on SrTiO3 and 74.2T for on MgO, using 90% of the normal state resistance and the Werthamer-Helfand-Hohenberg model. The coherence length ξ0 is very short: 2.30nm for on SrTiO3 and 2.10nm for on MgO. The film grown on MgO showed T; then the isotropic parameter γ is 1.09. The best J c observed is 104Acm-2 (at 2K, self-field) for the sample deposited on MgO.

AB - Epitaxial Fe-Te-S thin films (thickness range 100-200nm) were deposited by pulsed laser deposition at 400 °C on SrTiO3(100) and MgO(100) single-crystal substrates. The films reached the zero-resistance condition: Tc0 = 3.54K for on SrTiO3 and 5.37K for on MgO, and presented a large upper critical field: T for on SrTiO3 and 74.2T for on MgO, using 90% of the normal state resistance and the Werthamer-Helfand-Hohenberg model. The coherence length ξ0 is very short: 2.30nm for on SrTiO3 and 2.10nm for on MgO. The film grown on MgO showed T; then the isotropic parameter γ is 1.09. The best J c observed is 104Acm-2 (at 2K, self-field) for the sample deposited on MgO.

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