Improvement of the interface properties of fluoride/gaas(100) structures by postgrowth annealing

Kwang Ho Kim, Hiroshi Ishiwara, Tanemasa Asano, Seijiro Furukawa

研究成果: ジャーナルへの寄稿学術誌査読

12 被引用数 (Scopus)

抄録

The postgrowth annealing technique has been shown to be useful for improving the interface properties of fluoride films grown on GaAs(100) by molecular beam epitaxy. Annealings typically at 800°C-850°C for 1 min reduce the interface state densities of the fluoride/GaAs interface to about 5×1011/cm2eV (derived from the 1 MHz capacitance-voltage measurement) in both n- and p-type substrates. Photoluminescence intensity of the CaF2-coated GaAs was compared before and after annealing. Ambient dependency during annealing was also investigated by measuring the structural and electrical properties of the films.

本文言語英語
ページ(範囲)L2180-L2182
ジャーナルJapanese journal of applied physics
27
11 A
DOI
出版ステータス出版済み - 11月 1988
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 工学一般
  • 物理学および天文学一般

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