The effects of the H- implantation (8.1 keV and 0-5 × 1016 cm-2) and two-step annealing (1st: 500°C for 30 min, 2nd: 850°C for 60 min) on the stress relaxation of c-Si 1-xGex buffer layers on insulator (SGOI) formed by the oxidation-induced Ge condensation process have been investigated. The stress relaxation of SGOI during oxidation (1100°C) was significantly improved by high-dose (>1015 cm-2) H+ implantation. However, the oxidation was also enhanced by the implantation. The enhanced oxidation was completely suppressed by the two-step annealing before oxidation. The enhanced stress relaxation was attributed to the enhanced gliding of the c-Si1-xGex layers on SiO2. This newly developed combination method of H- implantation, the two-step annealing, and the oxidation-induced Ge condensation will be a powerful tool in the fabrication of highly relaxed SGOI for growth of strained Si layers.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||出版済み - 4月 2005|
!!!All Science Journal Classification (ASJC) codes