TY - JOUR
T1 - Improvement of oxidation-induced Ge condensation method by H+ implantation and two-step annealing for highly stress-relaxed SiGe-on-insulator
AU - Sadoh, Taizoh
AU - Matsuura, Ryo
AU - Ninomiya, Masaharu
AU - Nakamae, Masahiko
AU - Enokida, Toyotsugu
AU - Hagino, Hiroyasu
AU - Miyao, Masanobu
PY - 2005/4
Y1 - 2005/4
N2 - The effects of the H- implantation (8.1 keV and 0-5 × 1016 cm-2) and two-step annealing (1st: 500°C for 30 min, 2nd: 850°C for 60 min) on the stress relaxation of c-Si 1-xGex buffer layers on insulator (SGOI) formed by the oxidation-induced Ge condensation process have been investigated. The stress relaxation of SGOI during oxidation (1100°C) was significantly improved by high-dose (>1015 cm-2) H+ implantation. However, the oxidation was also enhanced by the implantation. The enhanced oxidation was completely suppressed by the two-step annealing before oxidation. The enhanced stress relaxation was attributed to the enhanced gliding of the c-Si1-xGex layers on SiO2. This newly developed combination method of H- implantation, the two-step annealing, and the oxidation-induced Ge condensation will be a powerful tool in the fabrication of highly relaxed SGOI for growth of strained Si layers.
AB - The effects of the H- implantation (8.1 keV and 0-5 × 1016 cm-2) and two-step annealing (1st: 500°C for 30 min, 2nd: 850°C for 60 min) on the stress relaxation of c-Si 1-xGex buffer layers on insulator (SGOI) formed by the oxidation-induced Ge condensation process have been investigated. The stress relaxation of SGOI during oxidation (1100°C) was significantly improved by high-dose (>1015 cm-2) H+ implantation. However, the oxidation was also enhanced by the implantation. The enhanced oxidation was completely suppressed by the two-step annealing before oxidation. The enhanced stress relaxation was attributed to the enhanced gliding of the c-Si1-xGex layers on SiO2. This newly developed combination method of H- implantation, the two-step annealing, and the oxidation-induced Ge condensation will be a powerful tool in the fabrication of highly relaxed SGOI for growth of strained Si layers.
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U2 - 10.1143/JJAP.44.2357
DO - 10.1143/JJAP.44.2357
M3 - Article
AN - SCOPUS:21244502933
SN - 0021-4922
VL - 44
SP - 2357
EP - 2360
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
IS - 4 B
ER -