Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator

Taizoh Sadoh; Ryo Matsuura; Masaharu Ninomiya; Masahiko Nakamae; Toyotsugu Enokida; Hiroyasu Hagino; Masanobu Miyao

Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator

Taizoh Sadoh
, Ryo Matsuura
, Masaharu Ninomiya
, Masahiko Nakamae
, Toyotsugu Enokida
, Hiroyasu Hagino
, Masanobu Miyao

電子デバイス工学

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

本文言語	英語
ページ（範囲）	2357-2360
ページ数	4
ジャーナル	Japanese Journal of Applied Physics, Part 2: Letters
巻	44
号	4
出版ステータス	出版済み - 4月 30 2005

文献へのアクセス

http://id.ndl.go.jp/bib/7306377

引用スタイル

Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator. / Sadoh, Taizoh; Matsuura, Ryo; Ninomiya, Masaharu その他.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 44, No. 4, 30.04.2005, p. 2357-2360.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

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AU - Ninomiya, Masaharu

AU - Nakamae, Masahiko

AU - Enokida, Toyotsugu

AU - Hagino, Hiroyasu

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