Improvement of breakdown characteristics of the gate oxynitride using N₂O

Charge trapping and dielectric breakdown (Q_bd) properties of rapidly thermal gate oxynitrided (RTON) films have been studied using N₂O. The gate voltage shift (ΔV_G) has been used to characterize the charge trapping properties under Fowler-Nordheim electron injection from Si substrate. It is found that RTON with N₂O can reduce ΔV_G resulting from the reduction of trapped electrons. Oxynitridation characteristics in N₂O is also discussed. Oxynitridation characteristics can not be explained as classical Deal-Grove model. Deal-Drove model is modified to fit theoretical curve to experimental data.