TY - JOUR
T1 - Improvement Design for Turn-On Switching Characteristics in Surface Buffer Insulated Gate Bipolar Transistor
AU - Saito, Wataru
AU - Nishizawa, Shin Ichi
N1 - Publisher Copyright:
© 1980-2012 IEEE.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020/12
Y1 - 2020/12
N2 - A design direction in surface buffer insulated gate bipolar transistor (SB-IGBT) is shown for improvement of turn-on switching characteristics, such as switching controllability, current surge and turn-on loss. At turn-on switching, hole current around the gate degrades the switching controllability and induces EMI noise due to negative gate capacitance. However, SB-IGBT can be designed to suppress the negative gate capacitance by enhancement of hole evacuation through pMOS channel. Although turn-on loss can be decreased by small gate-collector capacitance C {gc} , the influence of negative gate capacitance is remarkable. Therefore, TCAD simulation results show that high hole evacuation through pMOS channel and optimum C {gc} design are effective to improve turn-on switching characteristics.
AB - A design direction in surface buffer insulated gate bipolar transistor (SB-IGBT) is shown for improvement of turn-on switching characteristics, such as switching controllability, current surge and turn-on loss. At turn-on switching, hole current around the gate degrades the switching controllability and induces EMI noise due to negative gate capacitance. However, SB-IGBT can be designed to suppress the negative gate capacitance by enhancement of hole evacuation through pMOS channel. Although turn-on loss can be decreased by small gate-collector capacitance C {gc} , the influence of negative gate capacitance is remarkable. Therefore, TCAD simulation results show that high hole evacuation through pMOS channel and optimum C {gc} design are effective to improve turn-on switching characteristics.
UR - http://www.scopus.com/inward/record.url?scp=85097336417&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85097336417&partnerID=8YFLogxK
U2 - 10.1109/LED.2020.3034898
DO - 10.1109/LED.2020.3034898
M3 - Article
AN - SCOPUS:85097336417
SN - 0741-3106
VL - 41
SP - 1814
EP - 1816
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 12
M1 - 9245572
ER -