Impact of metastable phases on electrical properties of Si with different doping concentrations after processing by high-pressure torsion

Bumsoo Chon, Yoshifumi Ikoma, Masamichi Kohno, Junichiro Shiomi, Martha R. McCartney, David J. Smith, Zenji Horita

研究成果: ジャーナルへの寄稿学術誌査読

10 被引用数 (Scopus)

抄録

Si (100) wafers with various doping levels were subjected to high-pressure torsion (HPT). The resistivities for all doping levels increased by one or two orders of magnitude after initial compression, but then decreased after 10 revolutions of HPT processing to ~0.1 Ω cm for normally and heavily doped samples, and to ~0.02 Ω cm for the ultraheavily doped sample. After annealing at 873 K, the resistivities increased by four orders of magnitude compared to the original Si wafers. These results indicate that the formation of metastable phases plays an important role in the electrical resistivities of HPT-processed samples.

本文言語英語
ページ(範囲)120-123
ページ数4
ジャーナルScripta Materialia
157
DOI
出版ステータス出版済み - 12月 2018

!!!All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学
  • 金属および合金

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